欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: TP0610T
廠商: ELAN Microelctronics Corp .
英文描述: P-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓-61V,P溝道增強型垂直DMOS結構場效應管)
中文描述: P通道增強模式垂直的DMOS場效應管(擊穿電壓- 61V,P溝道增強型垂直的DMOS結構場效應管)
文件頁數: 1/4頁
文件大小: 30K
代理商: TP0610T
7-119
TP0610T
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Note: See Package Outline section for dimensions.
P-Channel Enhancement-Mode
Vertical DMOS FETs
Package Options
Features
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
ISS
and fast switching speeds
Excellent thermal stability
Integral Source-Drain diode
High input impedance and high gain
Complementary N- and P-channel devices
Applications
Logic level interfaces – ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSS
BV
DGS
±
20V
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
-55
°
C to +150
°
C
Soldering Temperature*
*
Distance of 1.6 mm from case for 10 seconds.
300
°
C
BV
DSS
/
BV
DGS
-60V
R
DS(ON)
(max)
I
D(ON)
(min)
Order Number/Package
TO-236AB*
10
-50mA
TP0610T
*Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.
Gate
Source
Drain
TO-236AB
(SOT-23)
top view
Product marking for SOT-23:
T50
F
where
F
= 2-week alpha date code
Ordering Information
相關PDF資料
PDF描述
TP0620 P-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓-200V,低門限2.4V,P溝道增強型垂直DMOS結構場效應管)
TP11362AV Quad Adaptive Differential PCM Processor
TP11362A Quad Adaptive Differential PCM Processor(四通道適應性微分PCM處理器)
TP11362 CONNECTOR
TP11362AN CONNECTOR ACCESSORY
相關代理商/技術參數
參數描述
TP0610T-G 功能描述:MOSFET -60V 100hm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
TP0610TT1 制造商:SILICONIX 功能描述:*
TP0610T-T1 制造商:Vishay Angstrohm 功能描述:Trans MOSFET P-CH 60V 0.12A 3-Pin TO-236 T/R
TP0620 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:P-Channel Enhancement-Mode Vertical DMOS FETs
TP0620N3 功能描述:MOSFET 200V 12Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
主站蜘蛛池模板: 石城县| 吉首市| 大名县| 平凉市| 新河县| 中超| 萨嘎县| 冕宁县| 海宁市| 兴城市| 楚雄市| 英超| 济阳县| 台安县| 达尔| 越西县| 新蔡县| 华宁县| 永安市| 外汇| 都昌县| 邵阳县| 泸定县| 房山区| 哈尔滨市| 定南县| 江西省| 小金县| 景泰县| 盐城市| 当阳市| 甘洛县| 汝城县| 民县| 万年县| 西藏| 安康市| 当涂县| 灵寿县| 万源市| 石城县|