
1
TP3022B
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
The RF Line
The TP3022B is designed for common–emitter operation in the 900 MHz
mobile radio band. Use of gold metallization and silicon diffused ballast
resistors results in a medium power output/driver transistor with state–of–the–
art ruggedness and reliability.
Specified 26 Volts, 960 MHz Characteristics:
Output Power = 15 Watts
Minimum Gain = 8.5 dB
IQ = 50 mA
Class AB Operation
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
PD
29
0.167
Vdc
Operating Junction Temperature
TJ
Tstg
200
°
C
Storage Temperature Range
–65 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case (1)
R
θ
JC
6.0
°
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
(1)
Collector–Emitter Breakdown Voltage
(IC = 10 mA, RBE = 75 Ohms)
V(BR)CER
40
—
—
Vdc
Collector–Emitter Leakage
(VCE = 26 V, RBE = 75 Ohms)
ICER
—
—
5.0
mA
Emitter–Base Breakdown Voltage
(IC = 5.0 mAdc)
V(BR)EBO
3.5
—
—
Vdc
Emitter–Base Leakage
(VBE = 2.5 V)
IEBO
—
—
1.0
mA
ON CHARACTERISTICS
DC Current Gain
(IC = 500 mA, VCE = 10 V)
hFE
15
—
100
—
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 24 V, IE = 0, f = 1.0 MHz)
Cob
—
17
25
pF
FUNCTIONAL TESTS
Common–Emitter Amplifier Power Gain
(VCE = 26 V, Pout = 15 W, f = 960 MHz, IQ = 50 mA)
GPE
8.5
—
—
dB
Collector Efficiency
(VCE = 26 V, Pout = 15 W, f = 960 MHz, IQ = 50 mA)
η
c
45
—
—
%
NOTE:
1. Thermal resistance is determined under specified RF operating condition.
Order this document
by TP3022B/D
SEMICONDUCTOR TECHNICAL DATA
15 W, 960 MHz
NPN SILICON
UHF POWER
TRANSISTOR
CASE 319–07, STYLE 2