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參數資料
| 型號： | TPS1100YD |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | CONNECTOR ACCESSORY |
| 中文描述： | 連接器附件 |
| 文件頁數： | 3/10頁 |
| 文件大小： | 155K |
| 代理商： | TPS1100YD |
TPS1100, TPS1100Y
SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS
SLVS078C – DECEMBER 1993 – REVISED AUGUST 1995
3
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
absolute maximum ratings over operating free-air temperature (unless otherwise noted)
UNIT
Drain-to-source voltage, VDS
Gate-to-source voltage, VGS
–15
V
2 or –15
±
0.41
±
0.28
±
0.4
±
0.23
±
0.6
±
0.33
±
0.53
±
0.27
V
D package
TA = 25
°
C
TA = 125
°
C
TA = 25
°
C
TA = 125
°
C
TA = 25
°
C
TA = 125
°
C
TA = 25
°
C
TA = 125
°
C
TA = 25
°
C
TA = 125
°
C
TA = 25
°
C
TA = 125
°
C
TA = 25
°
C
TA = 125
°
C
TA = 25
°
C
TA = 125
°
C
TA = 25
°
C
TA = 25
°
C
VGS=
VGS = –2.7 V
2 7 V
PW package
D package
VGS=
VGS = –3 V
PW package
Continuous drain current (TJ= 150
C) ID
A
Continuous drain current (TJ = 150
°
C), ID
D package
±
1
VGS=
VGS = –4.5 V
4 5 V
±
0.47
±
0.81
±
0.37
±
1.6
±
0.72
±
1.27
±
0.58
PW package
D package
VGS=
VGS = –10 V
PW package
Pulsed drain current, ID
Continuous source current (diode conduction), IS
Storage temperature range, Tstg
Operating junction temperature range, TJ
Operating free-air temperature range, TA
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
Maximum values are calculated using a derating factor based on R
θ
JA = 158
°
C/W for the D package and R
θ
JA = 248
°
C/W for the PW package.
These devices are mounted on a FR4 board with no special thermal considerations.
±
7
–1
A
A
°
C
–55 to 150
–40 to 150
°
C
°
C
°
C
–40 to 125
260
DISSIPATION RATING TABLE
DERATING FACTOR
ABOVE TA = 25
°
C
6.33 mW/
°
C
4.03 mW/
°
C
PACKAGE
TA
≤
25
°
C
POWER RATING
TA = 70
°
C
POWER RATING
TA = 85
°
C
POWER RATING
TA = 125
°
C
POWER RATING
D
791 mW
506 mW
411 mW
158 mW
PW
504 mW
323 mW
262 mW
101 mW
Maximum values are calculated using a derating factor based on R
θ
JA = 158
°
C/W for the D package and R
θ
JA = 248
°
C/W
for the PW package. These devices are mounted on an FR4 board with no special thermal considerations when tested.
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| TPS1101D | 功能描述:MOSFET Single P-Ch Enh-Mode MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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