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參數(shù)資料
| 型號(hào)： | TPS1100YD |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | CONNECTOR ACCESSORY |
| 中文描述： | 連接器附件 |
| 文件頁數(shù)： | 6/10頁 |
| 文件大小： | 155K |
| 代理商： | TPS1100YD |
TPS1100, TPS1100Y
SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS
SLVS078C – DECEMBER 1993 – REVISED AUGUST 1995
6
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
– 5
– 4
– 2
– 1
0
– 3
0
– 1
– 2
VDS – Drain-to-Source Voltage – V
Figure 3
– 3
– 4
– 5
– 6
–
I
– 7
– 6
DRAIN CURRENT
vs
DRAIN-TO-SOURCE VOLTAGE
– 7
– 8
– 9 – 10
VGS = –6 V
áá
áá
VGS = –8 V
VGS = –7 V
VGS = –3 V
VGS = –4 V
VGS = –2 V
VGS = –5 V
TJ = 25
°
C
Figure 4
0
– 2
– 3
– 5
DRAIN CURRENT
vs
GATE-TO-SOURCE VOLTAGE
– 7
– 1
– 4
– 6
–
I
áá
áá
VGS – Gate-to-Source Voltage – V
TJ = 150
°
C
TJ = 25
°
C
TJ = –40
°
C
VDS = –10 V
0
– 5
– 4
– 2
– 1
– 3
– 7
– 6
0.3
0.2
0.1
0
– 0.1
– 1
0.4
0.5
STATIC DRAIN-TO-SOURCE ON-STATE RESISTANCE
vs
DRAIN CURRENT
0.7
TJ = 25
°
C
0.6
– 10
ID – Drain Current – A
VGS = –2.7 V
VGS = –3 V
VGS = –4.5 V
VGS = –10 V
–
r
O
Figure 5
200
150
50
0
0 – 1 – 2 – 3 – 4 – 5 – 6
VDS – Drain-to-Source Voltage – V
Ciss
C
250
300
CAPACITANCE
vs
DRAIN-TO-SOURCE VOLTAGE
350
– 7 – 8 – 9
–12
100
–10 –11
Coss
Ciss
Crss
VGS = 0
f = 1 MHz
TJ = 25
°
C
Figure 6
Crss
Cgd, Coss
Cds
CgsCgd
Cgs
Cgd
≈
Cds
Cgd
Cgs
Cgd, Cds(shorted)
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| TPS1101Y | CONNECTOR ACCESSORY |
| TPS1101YDW | CONNECTOR ACCESSORY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TPS1100YPW | 制造商:TI 制造商全稱:Texas Instruments 功能描述:SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS |
| TPS1101 | 制造商:TI 制造商全稱:Texas Instruments 功能描述:SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS |
| TPS1101_12 | 制造商:TI 制造商全稱:Texas Instruments 功能描述:SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS |
| TPS1101D | 功能描述:MOSFET Single P-Ch Enh-Mode MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TPS1101DG4 | 功能描述:MOSFET Single P-Ch Enh-Mode MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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