- 您現在的位置：買賣IC網 > PDF目錄382674 > TPS1100YPW (Texas Instruments, Inc.) SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS PDF資料下載
參數資料
| 型號： | TPS1100YPW |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS |
| 中文描述： | 單P溝道增強型MOSFET |
| 文件頁數： | 2/10頁 |
| 文件大小： | 155K |
| 代理商： | TPS1100YPW |
TPS1100, TPS1100Y
SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS
SLVS078C – DECEMBER 1993 – REVISED AUGUST 1995
2
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
description (continued)
Such applications include notebook computers, personal digital assistants (PDAs), cellular telephones, and
PCMCIA cards. For existing designs, the D-packaged version has a pinout common with other p-channel
MOSFETs in SOIC packages.
TPS1100Y chip information
This chip, when properly assembled, displays characteristics similar to the TPS1100. Thermal compression or
ultrasonic bonding may be used on the doped aluminum bonding pads. The chips may be mounted with
conductive epoxy or a gold-silicon preform.
BONDING PAD ASSIGNMENTS
CHIP THICKNESS: 15 MILS TYPICAL
BONDING PADS: 4
×
4 MILS MINIMUM
TJmax = 150
°
C
TOLERANCES ARE
±
10%
ALL DIMENSIONS ARE IN MILS
57
64
TPS1100Y
(2)
(6)
(1)
(3)
(7)
(8)
(5)
(4)
DRAIN
SOURCE
SOURCE
SOURCE
GATE
DRAIN
DRAIN
DRAIN
(2)
(1)
(3)
(4)
(6)
(7)
(8)
(5)
相關PDF資料 |
PDF描述 |
|---|---|
| TPS1100Y | CONNECTOR ACCESSORY |
| TPS1100YD | CONNECTOR ACCESSORY |
| TPS1101YPW | TELEPHONE CBL 8-CONDUCTOR1000 |
| TPS1101DW | CONNECTOR ACCESSORY |
| TPS1101PW | CONNECTOR ACCESSORY |
相關代理商/技術參數 |
參數描述 |
|---|---|
| TPS1101 | 制造商:TI 制造商全稱:Texas Instruments 功能描述:SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS |
| TPS1101_12 | 制造商:TI 制造商全稱:Texas Instruments 功能描述:SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS |
| TPS1101D | 功能描述:MOSFET Single P-Ch Enh-Mode MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TPS1101DG4 | 功能描述:MOSFET Single P-Ch Enh-Mode MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TPS1101DR | 功能描述:MOSFET Single P-Ch Enh-Mode MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發布緊急采購，3分鐘左右您將得到回復。