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參數資料
| 型號： | TPS1101PW |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | CONNECTOR ACCESSORY |
| 中文描述： | 連接器附件 |
| 文件頁數： | 5/10頁 |
| 文件大小： | 161K |
| 代理商： | TPS1101PW |
TPS1101, TPS1101Y
SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS
SLVS079C – DECEMBER 1993 – REVISED AUGUST 1995
5
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
PARAMETER MEASUREMENT INFORMATION
Figure 1. Switching-Time Test Circuit
RG
DUT
RL
VDD
–
+
VGS
VDS
Figure 2. Switching-Time Waveforms
td(on)
tr
VDS
td(off)
tf
VGS
90%
10%
0 V
–10 V
TYPICAL CHARACTERISTICS
Table of Graphs
FIGURE
Drain current
vs Drain-to-source voltage
3
Drain current
vs Gate-to-source voltage
4
Static drain-to-source on-state resistance
vs Drain current
5
Capacitance
vs Drain-to-source voltage
6
Static drain-to-source on-state resistance (normalized)
vs Junction temperature
7
Source-to-drain diode current
vs Source-to-drain voltage
8
Static drain-to-source on-state resistance
vs Gate-to-source voltage
9
Gate-to-source threshold voltage
vs Junction temperature
10
Gate-to-source voltage
vs Gate charge
11
相關PDF資料 |
PDF描述 |
|---|---|
| TPS1101Y | CONNECTOR ACCESSORY |
| TPS1101YDW | CONNECTOR ACCESSORY |
| TPS1120YD | CONNECTOR ACCESSORY |
| TPS1120Y | CONNECTOR ACCESSORY |
| TPS2010APWP | CONNECTOR ACCESSORY |
相關代理商/技術參數 |
參數描述 |
|---|---|
| TPS1101PWLE | 制造商:TI 制造商全稱:Texas Instruments 功能描述:SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS |
| TPS1101PWR | 功能描述:MOSFET Single P-Ch Enh-Mode MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TPS1101PWRG4 | 功能描述:MOSFET Single P-Ch Enh-Mode MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TPS1101Y | 制造商:TI 制造商全稱:Texas Instruments 功能描述:SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS |
| TPS1101YDW | 制造商:TI 制造商全稱:Texas Instruments 功能描述:SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS |
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