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參數資料
| 型號： | TPS1101Y |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | CONNECTOR ACCESSORY |
| 中文描述： | 連接器附件 |
| 文件頁數： | 7/10頁 |
| 文件大?。?/td> | 161K |
| 代理商： | TPS1101Y |
TPS1101, TPS1101Y
SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS
SLVS079C – DECEMBER 1993 – REVISED AUGUST 1995
7
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 7
1.2
0.9
0.8
0.6
1.3
1.4
STATIC DRAIN-TO-SOURCE
ON-STATE RESISTANCE (NORMALIZED)
vs
JUNCTION TEMPERATURE
1.5
1.1
1
0.7
–50
0
50
100
150
TJ – Junction Temperature –
°
C
VGS = –10 V
ID = –1A
–
r
O
Figure 8
– 0.1
– 0.1
SOURCE-TO-DRAIN DIODE CURRENT
vs
SOURCE-TO-DRAIN VOLTAGE
– 1
– 10
– 0.3
VSD – Source-to-Drain Voltage – V
– 0.5
– 0.7
– 0.9
– 1.1
– 1.3
TJ = 25
°
C
TJ = –40
°
C
TJ = 150
°
C
–
I
Pulse Test
Figure 9
0.2
0.1
0
– 1
– 3
– 5
– 7
0.3
0.4
STATIC DRAIN-TO-SOURCE ON-STATE RESISTANCE
vs
GATE-TO-SOURCE VOLTAGE
0.5
– 9
– 11
– 13
– 15
VGS – Gate-to-Source Voltage – V
ID = –1 A
TJ = 25
°
C
–
r
R
Figure 10
– 1.2
– 1.1
–
– 1.3
– 1.4
GATE-TO-SOURCE THRESHOLD VOLTAGE
vs
JUNCTION TEMPERATURE
– 1.5
–50
0
50
100
150
– 1
– 0.9
TJ – Junction Temperature –
°
C
áá
áá
áá
ID = –250
μ
A
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