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參數資料
| 型號： | TPS40211DRCTG4 |
| 廠商： | TEXAS INSTRUMENTS INC |
| 元件分類： | 穩壓器 |
| 英文描述： | SWITCHING REGULATOR, 1000 kHz SWITCHING FREQ-MAX, PDSO10 |
| 封裝： | GREEN, PLASTIC, SON-10 |
| 文件頁數： | 22/47頁 |
| 文件大?。?/td> | 1375K |
| 代理商： | TPS40211DRCTG4 |
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(
)
(
)
ISNS(OC)MIN
ISNS
Drive
L peak
V
120mV
R
15.4m
1.1 (6.57 A
0.50 A)
1.1
I
<
=
W
+
+
IN(MAX)
SW
ISNS
OUT
FD
IN
V
L
14 V 10 H 600kHz
R
134m
60 (V
V
V )
60 (24 V
0.48 V 14 V)
m
<
=
W
+
-
+
-
f
2
R
LRMS
ISNS
P
(I
)
R
D
=
×
ISNS
MIN
IFLT
SW
IFLT
0.1 D
0.1 0.429
C
71pF
R
600kHz 1k
=
W
f
DISS(total)
OUT
1
P
1
V
I
1
24 V 2 A
1
2.526 W
0.95
-
=
-
=
-
=
÷
÷
÷
h
è
è
è
(
)
FET
L
D
Risns
IN(max)
VDD(max)
DISS total
P
V
I
<
-
f
FET
DRIVE
GS
OUT
SW
3
P
I
3
0.50 W
0.50 A
Q
13.0 nC
2
V
I
2
24 V
2 A
600 kHz
<
=
( )
(
)
FET
DS on
2
RMS
P
0.50 W
R
9.9 m
2
6.13
0.673
2
I
D
<
=
W
www.ti.com
SLUS772D – MARCH 2008 – REVISED APRIL 2010
Current Sense and Current Limit
The maximum allowable current sense resistor value is limited by both the current limit and sub-harmonic
stability. These two limitations are given by Equation 49 and Equation 50.
(49)
(50)
With 10% margin on the current limit trip point (the 1.1 factor) and assuming a maximum gate drive current of
500 mA, the current limit requires a resistor less than 15.4 m
and stability requires a sense resistor less than
134 m
. A 10-m resistor is selected. Approximately 2-m of routing resistance is added in compensation
calculations.
(51)
At maximum duty cycle, this is 0.253 W.
Current Sense Filter
To remove switching noise from the current sense, an R-C filter is placed between the current sense resistor and
the ISNS pin. A resistor with a value between 1 k
and 5 k is selected and a capacitor value is calculated by
(52)
For a 1-k
filter resistor, 71 pF is calculated and a 100-pF capacitor is selected.
Switching MOSFET Selection
The TPS40210 drives a ground referenced N-channel FET. The RDS(on) and gate charge are estimated based on
the desired efficiency target.
(53)
For a target of 95% efficiency with a 24 V Input voltage at 2 A, maximum power dissipation is limited to 2.526 W.
The main power dissipating devices are the MOSFET, inductor, diode, current sense resistor and the integrated
circuit, the TPS40210.
(54)
This leaves 812 mW of power dissipation for the MOSFET. This can likely cause an SO-8 MOSFET to get too
hot, so power dissipation is limited to 500 mW. Allowing half for conduction and half for switching losses, we can
(55)
A target MOSFET gate-to-source charge of less than 13.0 nC is calculated to limit the switching losses to less
than 250 mW.
(56)
A target MOSFET RDS(on) of 9.9 m is calculated to limit the conduction losses to less than 250 mW. Reviewing
30-V and 40-V MOSFETs, an Si4386DY 9-m
MOSFET is selected. A gate resistor was added per Equation 30.
The maximum gate charge at Vgs=8 V for the Si4386DY is 33.2 nC, this implies RG = 3.3 .
Copyright 2008–2010, Texas Instruments Incorporated
29
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