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參數(shù)資料
| 型號(hào)： | TPS65058RGET |
| 廠商： | TEXAS INSTRUMENTS INC |
| 元件分類： | 穩(wěn)壓器 |
| 英文描述： | 1.8 A DUAL SWITCHING CONTROLLER, 2475 kHz SWITCHING FREQ-MAX, PQCC32 |
| 封裝： | 4 X 4 MM, GREEN, PLASTIC, VQFN-32 |
| 文件頁數(shù)： | 21/26頁 |
| 文件大小： | 1898K |
| 代理商： | TPS65058RGET |
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ELECTRICAL CHARACTERISTICS
SLVS851A – MAY 2008 – REVISED SEPTEMBER 2008................................................................................................................................................... www.ti.com
Vcc = VINDCDC1/2 = 3.6V, EN = Vcc, MODE = GND, L = 2.2H, COUT = 22F, TA = –40°C to 85°C typical values
are at TA = 25°C (unless otherwise noted).
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
SUPPLY CURRENT
Vcc
Input voltage range
2.5
6.
V
One converter, IOUT = 0 mA.PFM mode enabled (Mode = GND)
device not switching,
20
30
A
EN_DCDC1 = Vin OR EN_DCDC2 = Vin;
EN_LDO1= EN_LDO2 = EN_LDO3 = GND
Two converters, IOUT = 0 mA, PFM mode enabled (Mode = 0)
Operating quiescent current
device not switching,
IQ
Total current into VCC, VINDCDC1/2,
32
40
A
EN_DCDC1 = Vin AND EN_DCDC2 = Vin;
VINLDO1, VINLDO2/3
EN_LDO1 = EN_LDO2 = EN_LDO3 = GND
One converter, IOUT = 0 mA, PFM mode enabled (Mode = GND)
device not switching,
145
210
A
EN_DCDC1 = Vin OR EN_DCDC2 = Vin;
EN_LDO1 = EN_LDO2 = EN_LDO3 = Vin
One converter, IOUT = 0 mA,
Switching with no load (Mode = Vin),
0.85
mA
PWM operation EN_DCDC1 = Vin OR EN_DCDC2 = Vin;
EN_LDO1 = EN_LDO2 = EN_LDO3 = GND
IQ
Operating quiescent current into VCC
Two converters, IOUT = 0 mA,
Switching with no load (Mode = Vin),
1.25
mA
PWM operation EN_DCDC1 = Vin AND EN_DCDC2 = Vin;
EN_LDO1 = EN_LDO2 = EN_LDO3 = GND
EN_DCDC1 = EN_DCDC2 = GND
I(SD)
Shutdown current
9
12
A
EN_LDO1 = EN_LDO2 = EN_LDO3 = GND
Undervoltage lockout threshold for
V(UVLO)
Voltage at VCC
1.8
2
V
DCDC converters and LDOs
EN_DCDC1, EN_DCDC2, EN_LDO1, EN_LDO2, EN_LDO3, MODE
High-level input voltage
MODE, EN_DCDC1, EN_DCDC2,
VIH
1.2
VCC
V
EN_LDO1, EN_LDO2, EN_LDO3,
DEF,DEF_LDO,DEF_DCDC2
Low-level input voltage
MODE, EN_DCDC1, EN_DCDC2,
VIL
0
0.4
V
EN_LDO1, EN_LDO2, EN_LDO3,
DEF_LDO, DEF_DCDC2
Input bias current
MODE, EN_DCDC1, EN_DCDC2,
IIN
MODE = GND or VIN
0.01
1
A
EN_LDO1, EN_LDO2, EN_LDO3,
DEF_LDO, DEF_DCDC2
POWER SWITCH
VINDCDC1/2 = 3.6V
250
350
P-channel MOSFET on
DCDC1,
rDS(on)
m
resistance
DCDC2
VINDCDC1/2 = 2.5V
380
500
ILD_PMOS
P-channel leakage current
V(DS) = 6V
1
A
VINDCDC1/2 = 3.6V
180
250
N-channel MOSFET on
DCDC1,
rDS(on)
m
resistance
DCDC2
VINDCDC1/2 = 2.5V
250
ILK_NMOS
N-channel leakage current
V(DS) = 6V
7
10
A
Forward Current Limit
DCDC1
1.19
1.4
1.65
I(LIMF)
PMOS (High-Side) and
2.5V
≤ VIN ≤ 6V
A
DCDC2
0.85
1.0
1.15
NMOS (Low side)
TSD
Thermal shutdown
Increasing junction temperature
150
°C
Thermal shutdown hysteresis
Decreasing junction temperature
20
°C
OSCILLATOR
fSW
Oscillator frequency
2.025
2.25
2.475
MHz
4
Copyright 2008, Texas Instruments Incorporated
Product Folder Link(s) :TPS65058
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