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TPV598
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1995
The RF Line
Designed for 4.0 watt stages in Band V TV transposer amplifiers. Gold
metallized dice and diffused emitter ballast resistors are used to enhance
reliability, ruggedness and linearity.
Band IV and V (470–860 MHz)
4.0 W — Pref @ –60 dB IMD
25 V — VCC
High Gain — 7.0 dB Min, Class A @ f = 860 MHz
Gold Metallization for Reliability
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
TJ
Tstg
27
Vdc
Collector–Base Voltage
45
Vdc
Emitter–Base Voltage
4.0
Vdc
Operating Junction Temperature
200
°
C
Storage Temperature Range
–65 to +200
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case (TC = 70
°
C)
Thermal Resistance, Case to Heatsink
R
θ
JC
R
θ
CH
6.2
°
C/W
0.4 Typ
°
C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 60 mA, IB = 0)
Collector–Base Breakdown Voltage (IC = 10 mA, IE = 0)
Emitter–Base Breakdown Voltage (IE = 3.0 mA, IC = 0)
Collector–Emitter Leakage Current (VCE = 20 V)
ON CHARACTERISTICS
DC Current Gain (IC = 500 mA, VCE = 20 V)
DYNAMIC CHARACTERISTICS
Output Capacitance (VCB = 25 V, IE = 0, f = 1.0 MHz)
FUNCTIONAL TESTS
Common–Emitter Amplifier Power Gain
(VCE = 25 V, Pout = 4.0 W, f = 860 MHz, IC = 850 mA)
Intermodulation Distortion, 3 Tone
(f = 860 MHz, VCE = 25 V, IE = 850 mA, Pref = 4.0 W,
Vision Carrier = –8.0 dB, Sound Carrier = –7.0 dB,
Sideband Signal = –16 dB, Specification TV05001)
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICEO
27
—
—
Vdc
45
—
—
Vdc
4.0
—
—
Vdc
—
—
5.0
mA
hFE
10
—
—
—
Cob
—
—
20
pF
GPE
7.0
—
—
dB
IMD1
—
—
–58
dB
Cutoff Frequency
(VCE = 25 V, IC = 850 mA)
f
τ
—
2.0
—
GHz
Order this document
by TPV598/D
SEMICONDUCTOR TECHNICAL DATA
4.0 W, 470–860 MHz
UHF LINEAR
POWER TRANSISTOR
CASE 244–04, STYLE 1
(.280 SOE)
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