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參數資料
| 型號： | TS8 |
| 廠商： | 意法半導體 |
| 英文描述： | 8A SCRs |
| 中文描述： | 8A條可控硅 |
| 文件頁數： | 1/9頁 |
| 文件大?。?/td> | 162K |
| 代理商： | TS8 |
1/9
MAIN FEATURES:
TN8, TS8 and TYNx08 Series
SENSITIVE & STANDARD
8A SCRs
April 2002 - Ed: 4A
DESCRIPTION
Available either in sensitive (TS8) or standard
(TN8 / TYN) gate triggering levels, the 8A SCR
series is suitable to fit all modes of control, found
in applications such as overvoltage crowbar
protection, motor control circuits in power tools
and kitchen aids, inrush current limiting circuits,
capacitive
discharge
regulation circuits...
Available in through-hole or surface-mount
packages, they provide an optimized performance
in a limited space area.
ignition
and
voltage
Symbol
Value
Unit
I
T(RMS)
8
A
V
DRM
/V
RRM
600 to 1000
V
I
GT
0.2 to 15
mA
ABSOLUTE RATINGS
(limiting values)
Symbol
Parameter
Value
Unit
I
T(RMS)
RMS on-state current (180° conduction angle)
Tc = 110°C
8
A
IT
(AV)
Average on-state current (180° conduction angle)
Tc = 110°C
5
A
TS8/TN8
TYN
I
TSM
Non repetitive surge peak on-state
current
tp = 8.3 ms
Tj = 25°C
73
100
A
tp = 10 ms
70
95
I
2
t
I
2
t Value for fusing
tp = 10 ms
Tj = 25°C
24.5
45
A
2
S
dI/dt
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, tr
≤
100 ns
F = 60 Hz
Tj = 125°C
50
A/μs
I
GM
Peak gate current
tp = 20 μs
Tj = 125°C
4
A
P
G(AV)
Average gate power dissipation
Tj = 125°C
1
W
T
stg
Tj
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
°C
V
RGM
Maximum peak reverse gate voltage (for TN8 & TYN only)
5
V
A
K
G
A
G
A
K
DPAK
(TS8-B)
(TN8-B)
A
A
K
G
IPAK
(TS8-H)
(TN8-H)
A
A
K
G
G
A
A
K
TO-220AB
(TS8-T)
TO-220AB
(TYNx)
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