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參數資料
型號: TSMF3710-GS18
廠商: Vishay Intertechnology,Inc.
英文描述: High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
中文描述: 高速紅外發光二極管,870納米,雙異質的GaAIAs
文件頁數: 1/8頁
文件大小: 135K
代理商: TSMF3710-GS18
TSMF3710
Vishay Semiconductors
Document Number 81088
Rev. 1.3, 21-Feb-07
www.vishay.com
1
94
8
553
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double
Hetero
Description
TSMF3710 is a high speed infrared emitting diode in
GaAlAs double hetero (DH) technology in a miniature
PLCC-2 SMD package.
DH technology combines high speed with high radiant
power at wavelength of 870 nm.
Features
High radiant power
High speed t
r
= 30 ns
High modulation band width f
c
= 12 MHz
Peak wavelength
λ
p
= 870 nm
High reliability
Low forward voltage
Suitable for high pulse current application
Wide angle of half intensity
Compatible with automatic placement equipment
EIA and ICE standard package
Suitable for infrared, vapor phase and wavesolder
process
8mm tape and reel standard: GS08 or GS18
Lead (Pb)-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
e3
Applications
High speed IR data transmission
High power emitter for low space applications
High performance transmissive or reflective sen-
sors
Parts Table
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Reverse voltage
Part
Ordering code
Remarks
TSMF3710-GS08
TSMF3710-GS08
MOQ: 7500 pc
TSMF3710-GS18
TSMF3710-GS18
MOQ: 8000 pc
Test condition
Symbol
V
R
I
F
I
FM
I
FSM
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
Value
5
Unit
V
Forward current
100
mA
Peak forward current
t
p
/T = 0.5, t
p
= 100 μs
t
p
= 100 μs
200
mA
Surge forward current
1
A
Power dissipation
170
mW
Junction temperature
100
°C
Operating temperature range
- 40 to + 85
°C
Storage temperature range
- 40 to + 100
°C
Soldering temperature
t
10 sec
260
°C
Thermal resistance junction/
ambient
450
K/W
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相關代理商/技術參數
參數描述
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