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參數(shù)資料
| 型號： | TZA3013BU |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 通信及網(wǎng)絡(luò) |
| 英文描述： | SDH/SONET STM16/OC48 transimpedance amplifier |
| 中文描述： | SPECIALTY TELECOM CIRCUIT, UUC15 |
| 封裝： | DIE-15 |
| 文件頁數(shù)： | 14/16頁 |
| 文件大小： | 104K |
| 代理商： | TZA3013BU |
2001 Feb 26
14
Philips Semiconductors
Product specification
SDH/SONET STM16/OC48
transimpedance amplifier
TZA3013A; TZA3013B
handbook, halfpage
MGT101
GNDD
TESTC
DREF
IN
INQ
O
O
P
V
A
O
O
G
T
G
810
μ
m
10
9
1
2
3
TZA3013AU
4
5
6
7
8
15
14
13
12
11
x
y
0
0
1230
μ
m
Fig.16 Bonding pad locations of the TZA3013AU.
handbook, halfpage
GNDD
TESTC
DREF
IN
INQ
O
O
P
V
A
O
O
G
T
G
MGT167
810
μ
m
1230
μ
m
10
9
1
2
3
TZA3013BU
4
5
6
7
8
15
14
13
12
11
x
y
0
0
Fig.17 Bonding pad locations of the TZA3013BU.
Physical characteristics of the bare die
PARAMETER
VALUE
Glass passivation
Bonding pad dimension
0.3
μ
m PSG (PhosphoSilicate Glass) on top of 0.8
μ
m silicon nitride
minimum dimension of exposed metallization is 90
×
90
μ
m (pad size = 100
×
100
μ
m)
except pads 2 and 3 which have exposed metallization of 80
×
80
μ
m
(pad size = 90
×
90
μ
m)
2.8
μ
m AlCu
380
μ
m nominal
0.810
×
1.230 mm (0.996 mm
2
)
silicon; electrically connected to GND potential through substrate contacts
<440
°
C; recommended die attach is glue
<15 s
Metallization
Thickness
Size
Backing
Attach temperature
Attach time
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