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參數資料
| 型號： | U421 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Monolithic Dual N-Channel JFET(最小柵源擊穿電壓-40V，柵極工作電流-0.25pA的單片雙N溝道結型場效應管) |
| 中文描述： | 單片雙N溝道場效應（最小柵源擊穿電壓- 40V的，柵極工作電流，0.25pA的單片雙?溝道結型場效應管） |
| 文件頁數： | 1/5頁 |
| 文件大小： | 72K |
| 代理商： | U421 |
U421/423
Siliconix
P-37514—Rev. B, 25-Jul-94
1
Monolithic N-Channel JFET Duals
Product Summary
Part Number
V
GS(off)
(V)
V
(BR)GSS
Min (V)
g
fs
Min (mS)
I
G
Typ (pA)
V
GS1
– V
GS2
Typ (mV)
U421
–0.4 to –2
–40
0.3
–0.25
10
U423
–0.4 to –2
–40
0.3
–0.25
25
Features
Monolithic Design
High Slew Rate
Low Offset/Drift Voltage
Low Gate Leakage: 0.2 pA
Low Noise
High CMRR: 102 dB
Benefits
Tight Differential Match vs. Current
Improved Op Amp Speed, Settling Time Accuracy
Minimum Input Error/Trimming Requirement
Insignificant Signal Loss/Error Voltage
High System Sensitivity
Minimum Error with Large Input Signals
Applications
Ultralow Input Current
Differential Amps
High-Speed Comparators
Impedance Converters
Description
The U421/423 are monolithic dual n-channel JFETs
designed to provide very high input impedance for
differential amplification and impedance matching. Among
its many unique features, this series offers operating gate
current specified at –250 fA.
The hermetic TO-78 package is available with full military
processing (see Military Information).
For similar products see the low-noise U/SST401 series
and high-gain 2N5911/5912 data sheets.
TO-78
Top View
G
1
S
1
D
1
G
2
D
2
S
2
Case, Substrate
1
2
3
7
6
5
4
Absolute Maximum Ratings
Gate-Drain, Gate-Source Voltage
Gate-Gate Voltage
Gate Current
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (
1
/
16
” from case for 10 sec.)
Storage Temperature
. . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature
–40 V
40 V
10 mA
300 C
. . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . .
–65 to 200 C
–55 to 150 C
. . . . . . . . . . . . . . . . . .
Power Dissipation :
Per Side
a
Total
b
300 mW
500 mW
. . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . .
Notes
a.
b.
Derate 2.4 mW/ C above 25 C
Derate 4 mW/ C above 25 C
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70248.
相關PDF資料 |
PDF描述 |
|---|---|
| U423 | Monolithic Dual N-Channel JFET(最小柵源擊穿電壓-40V，柵極工作電流-0.25pA的單片雙N溝道結型場效應管) |
| U430 | Matched N-Channel Pairs |
| U431 | Matched N-Channel Pairs |
| U430 | Matched N-Channel JFET Pairs(最小柵源擊穿電壓-25V，柵極工作電流-15pA的N溝道結型場效應管) |
| U431 | Matched N-Channel JFET Pairs(最小柵源擊穿電壓-25V，柵極工作電流-15pA的N溝道結型場效應管) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| U421_SOIC | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:a high input impedance Monolithic Dual N-Channel JFET |
| U421_TO-71 | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:high input impedance Monolithic Dual N-Channel JFET |
| U421_TO-78 | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:high input impedance Monolithic Dual N-Channel JFET |
| U421-E3 | 功能描述:JFET Dual Matched RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續電流:50 mA 配置: 安裝風格: 封裝 / 箱體:SC-59 封裝:Reel |
| U422 | 制造商:CALOGIC 制造商全稱:CALOGIC 功能描述:N-Channel Dual JFET |
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