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參數資料
| 型號： | U630H64DC25 |
| 英文描述： | Low noise JFET dual operational amplifiers |
| 中文描述： | NVRAM中（EEPROM的基礎） |
| 文件頁數： | 13/14頁 |
| 文件大小： | 143K |
| 代理商： | U630H64DC25 |
13
November 01, 2001
U630H64
The information describes the type of component and shall not be considered as assured characteristics. Terms of
delivery and rights to change design reserved.
Low Average Active Power
The U630H64 has been designed to draw significantly
less power when E is LOW (chip enabled) but the
access cycle time is longer than 55 ns.
When E is HIGH the chip consumes only standby cur-
rent.
The overall average current drawn by the part depends
on the following items:
1. CMOS or TTL input levels
2. the time during which the chip is disabled (E HIGH)
3. the cycle time for accesses (E LOW)
4. the ratio of READs to WRITEs
5. the operating temperature
6. the V
CC
level
相關PDF資料 |
PDF描述 |
|---|---|
| U630H64DC35 | NVRAM (EEPROM Based) |
| U630H64DC45 | Low noise JFET dual operational amplifiers |
| U630H64DK25 | Low noise JFET dual operational amplifiers |
| U630H64DK35 | Low noise JFET dual operational amplifiers |
| U630H64DK45 | NVRAM (EEPROM Based) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| U630H64DC35 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (EEPROM Based) |
| U630H64DC45 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (EEPROM Based) |
| U630H64DK25 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (EEPROM Based) |
| U630H64DK35 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (EEPROM Based) |
| U630H64DK45 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (EEPROM Based) |
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