- 您現在的位置：買賣IC網 > PDF目錄383973 > UMH8N (Rohm CO.,LTD.) General purpose (dual digital transistors) PDF資料下載
參數資料
| 型號： | UMH8N |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | General purpose (dual digital transistors) |
| 中文描述： | 通用（雙數字晶體管） |
| 文件頁數： | 1/3頁 |
| 文件大小： | 79K |
| 代理商： | UMH8N |
UMH8N / IMH8A
Transistors
General purpose (dual digital transistors)
Rev.A
1/2
UMH8N / IMH8A
z
Features
1) Two DTC114T chips in a EMT or UMT or SMT
package.
z
Equivalent circuits
UMH8N
(3)
R
1
R
1
R
1
=
10k
R
1
=
10k
IMH8A
(4)
R
1
R
1
(1)
(2)
(4) (5)
(6)
(6)
(5)
(3) (2)
(1)
z
Package, marking, and packaging specifications
Type
Package
Marking
Code
UMH8N
UMT6
H8
TR
3000
IMH8A
SMT6
H8
T108
3000
Basic ordering unit (pieces)
z
Absolute maximum ratings
(Ta=25
°
C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pd
Tj
Tstg
Limits
50
50
5
100
300(TOTAL)
150
55
to
+
150
150(TOTAL)
UMH8N
IMH8A
Unit
V
V
V
mA
mW
°
C
°
C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Storage temperature
1 120mW per element must not be exceeded.
2 200mW per element must not be exceeded.
z
Electrical characteristics
(Ta=25
°
C)
1
2
z
External dimensions
(Unit : mm)
UMH8N
Each lead has same dimensions
ROHM : UMT6
0
(
2
1
0
0
0
0.1Min.
2.1
0
0
1.25
(
0
(
(
(
(
IMH8A
Each lead has same dimensions
ROHM : SMT6
(
(
(
0.3Min.
0
0
1
0
0
(
2.8
1.6
1
2
0
0
(
(
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
R
1
Min.
50
50
5
100
7
Typ.
250
250
10
Max.
0.5
0.5
0.3
600
13
Unit
V
V
V
μ
A
μ
A
V
MHz
k
Conditions
Transition frequency
Input resistance
I
C
=
50
μ
A
I
C
=
1mA
I
E
=
50
μ
A
V
CB
=
50V
V
EB
=
4V
I
C
/I
B
=
10mA/1mA
V
CE
=
5V, I
C
=
1mA
V
CE
=
10V, I
E
=
5mA, f
=
100MHz
Transition frequency of the device.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
相關PDF資料 |
PDF描述 |
|---|---|
| UML1N | Low-frequency transistor |
| UML4N | General purpose transistor |
| UMP1N | SWITCHING DIODE |
| UMR12N | Switching diode Silicon epitaxial planar |
| UMT2222A | NPN Medium Power Transistor (Switching) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| UMH8NTR | 功能描述:開關晶體管 - 偏壓電阻器 DUAL NPN 50V 100MA RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發射極最大電壓 VCEO:50 V 集電極連續電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| UMH9 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SO |
| UMH9N | 制造商:ROHM 功能描述:LEAK ABSORB NPNx2 SMD (Surface Mount) Transistor UMT5 / 6 150mW 制造商:ROHM 功能描述:LEAK ABSORB NPNx2 SMD (Surface Mount) Transistor UMT5 / 6 150mW - free partial T/R at 500. 制造商:ROHM Semiconductor 功能描述:Semiconductor(Discrete),UMH9NTN,Transis |
| UMH9NTN | 功能描述:開關晶體管 - 偏壓電阻器 DUAL NPN 50V 70MA SOT-363 RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發射極最大電壓 VCEO:50 V 集電極連續電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| UMH9N-TP | 制造商:Micro Commercial Components (MCC) 功能描述:Trans Digital BJT NPN 100mA 6-Pin SOT-363 T/R |
發布緊急采購，3分鐘左右您將得到回復。