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參數(shù)資料
| 型號： | UNR4119 |
| 英文描述： | Composite Device - Transistors with built-in Resistor |
| 中文描述： | 復(fù)合裝置-內(nèi)置晶體管，電阻， |
| 文件頁數(shù)： | 1/15頁 |
| 文件大小： | 376K |
| 代理商： | UNR4119 |
Transistors with built-in Resistor
UNR41XX Series
(UN41XX Series)
Silicon PNP epitaxial planar transistor
1
Publication date: July 2002
SJH00018CED
For digital circuits
■
Features
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts
New S type package, allowing supply with the radial taping
■
Resistance by Part Number
(R
1
)
47 k
10 k
22 k
47 k
10 k
10 k
4.7 k
22 k
0.51 k
1 k
47 k
47 k
4.7 k
2.2 k
4.7 k
2.2 k
4.7 k
(R
2
)
10 k
22 k
47 k
47 k
5.1 k
10 k
10 k
22 k
10 k
10 k
4.7 k
47 k
47 k
UNR4110 (UN4110)
UNR4111 (UN4111)
UNR4112 (UN4112)
UNR4113 (UN4113)
UNR4114 (UN4114)
UNR4115 (UN4115)
UNR4116 (UN4116)
UNR4117 (UN4117)
UNR4118 (UN4118)
UNR4119 (UN4119)
UNR411D (UN411D)
UNR411E (UN411E)
UNR411F (UN411F)
UNR411H (UN411H)
UNR411L (UN411L)
UNR411M
UNR411N
■
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Collector to base voltage
V
CBO
50
50
100
V
Collector to emitter voltage
V
CEO
V
Collector current
I
C
P
T
mA
Total power dissipation
300
mW
Junction temperature
T
j
150
°
C
°
C
Storage temperature
T
stg
55 to
+
150
B
R
1
R
2
C
E
Internal Connection
Unit: mm
1: Emitter
2: Collector
3: Base
NS-B1 Package
4.0
±
0.2
0.75 max.
2.0
±
0.2
0.45
(2.5) (2.5)
0.7
±
0.1
2
3
1
+0.20
0.45
+0.20
7
3
±
0
(
(
1
±
0
Note) The part numbers in the parenthesis show conventional part number.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| UN4119 | Composite Device - Transistors with built-in Resistor |
| UNR411D | Composite Device - Transistors with built-in Resistor |
| UN411D | Composite Device - Transistors with built-in Resistor |
| UNR411E | Composite Device - Transistors with built-in Resistor |
| UN411E | Composite Device - Transistors with built-in Resistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UNR4119(UN4119) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:複合デバイス － 抵抗內(nèi)蔵型トランジスタ |
| UNR411900A | 功能描述:TRANS PNP W/RES 30HFE NS-B1 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路﹐預(yù)偏壓式 系列:- 標(biāo)準(zhǔn)包裝:10,000 系列:- 晶體管類型:NPN - 預(yù)偏壓 電流 - 集電極 (Ic)（最大）:100mA 電壓 - 集電極發(fā)射極擊穿（最大）:50V 電阻器 - 基極 (R1)（歐）:47k 電阻器 - 發(fā)射極 (R2)（歐）:47k 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):70 @ 5mA，5V Ib、Ic條件下的Vce飽和度（最大）:300mV @ 500µA，10mA 電流 - 集電極截止（最大）:- 頻率 - 轉(zhuǎn)換:100MHz 功率 - 最大:250mW 安裝類型:表面貼裝 封裝/外殼:SC-70，SOT-323 供應(yīng)商設(shè)備封裝:PG-SOT323-3 包裝:帶卷 (TR) 其它名稱:SP000756242 |
| UNR411D | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planar type |
| UNR411D(UN411D) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Composite Device - Transistors with built-in Resistor |
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