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參數資料
| 型號： | UPA1758G |
| 廠商： | NEC Corp. |
| 元件分類： | 功率晶體管 |
| 英文描述： | Switching N-channel power MOS FET industrial use |
| 中文描述： | N溝道 開關功率場效應晶體管 工業級 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 58K |
| 代理商： | UPA1758G |
The information in this document is subject to change without notice.
1998
MOS FIELD EFFECT TRANSISTOR
μ
PA1758
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DATA SHEET
Document No.
Date Published
Printed in Japan
D12911EJ1V0DS00 (1st edition)
October 1998 NS CP(K)
PACKAGE DRAWING (Unit : mm)
1.27
0.12 M
6.0 ±0.3
4.4
0.40
+0.10
0.78 Max.
0
1
1
0.8
0.5 ±0.2
0
+
–
5.37 Max.
0.10
1
4
8
5
1
2
7, 8
3
4
5, 6
; Source 1
; Gate 1
; Drain 1
; Source 2
; Gate 2
; Drain 2
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
DESCRIPTION
This product is Dual N-Channel MOS Field Effect Transistor designed for power management application of
notebook computers, and Li-ion battery application.
FEATURES
Dual MOS FET chips in small package
2.5 V gate drive type low on-state resistance
R
DS(on)1
= 30 m
(MAX.) (V
GS
= 4.5 V, I
D
= 3.0 A)
R
DS(on)2
= 40 m
(MAX.) (V
GS
= 2.5 V, I
D
= 3.0 A)
Low C
iss
: C
iss
= 1100 pF (TYP.)
Built-in G-S protection diode
Small and surface mount package (Power SOP8)
ORDERING INFORMATION
PART NUMBER
PACKAGE
μ
PA1758G
Power SOP8
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C)
Drain to Source Voltage (V
GS
= 0)
V
DSS
30
V
Gate to Source Voltage (V
DS
= 0)
V
GSS
±12.0
V
Drain Current (DC)
Drain Current (Pulse)
Note1
Total Power Dissipation (1 unit)
Note2
Total Power Dissipation (2 unit)
Note2
I
D(DC)
±6.0
A
I
D(pulse)
±24
A
P
T
1.7
W
P
T
2.0
W
Channel Temperature
T
ch
150
°C
Storage Temperature
T
stg
–55 to + 150
°C
Notes 1.
PW
≤
10
μ
s, Duty cycle
≤
1 %
2.
Mounted on ceramic substrate of 2000 mm
2
x 1.1 mm
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
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