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參數資料
| 型號： | UPA1900TE |
| 廠商： | NEC Corp. |
| 英文描述： | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 中文描述： | N溝道MOS場效應晶體管開關 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 61K |
| 代理商： | UPA1900TE |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
1998, 1999
MOS FIELD EFFECT TRANSISTOR
μ
PA1900
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DATA SHEET
Document No.
Date Published
Printed in Japan
D13809EJ1V0DS00 (1st edition)
June 1999 NS CP(K)
The mark
#
shows major revised points.
DESCRIPTION
The
μ
PA1900 is a switching device which can be driven
directly by a 2.5
V power source.
The
μ
PA1900 features a low on-state resistance and
excellent switching characteristics, and is suitable for
applications such as power switch of portable machine and
so on.
FEATURES
Can be driven by a 2.5
V power source
Low on-state resistance
R
DS(on)1
= 35 m
MAX. (V
GS
= 4.5
V, I
D
= 3.0
A)
R
DS(on)2
= 38 m
MAX. (V
GS
= 4.0
V, I
D
= 3.0
A)
R
DS(on)3
= 45 m
MAX. (V
GS
= 2.5
V, I
D
= 3.0
A)
ORDERING INFORMATION
PART NUMBER
PACKAGE
μ
PA1900TE
6-pin Mini Mold (Thin Type)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
20
±12
±5.5
±22
0.2
2
150
V
V
A
A
W
W
°C
°C
Total Power Dissipation
Total Power Dissipation
Note2
Channel Temperature
Storage Temperature
–55 to +150
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1 %
2.
Mounted on FR-4 Board, t
≤
5
sec.
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
PACKAGE DRAWING (Unit : mm)
0.65
0.9 to 1.1
0 to 0.1
0.16
+0.1
2
1
0.95
1
2
3
6
5
4
1.9
2.9 ±0.2
0.32
+0.1
0.95
0
+
–
1
, 2, 5, 6 : Drain
3
4
: Gate
: Source
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Marking: TG
Gate
Drain
相關PDF資料 |
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|---|---|
| UPA1901 | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1901TE | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1902 | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1902TE | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1910 | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
相關代理商/技術參數 |
參數描述 |
|---|---|
| UPA1901 | 制造商:NEC 制造商全稱:NEC 功能描述:N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1901TE | 制造商:NEC 制造商全稱:NEC 功能描述:N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1901TE-T1-A | 制造商:Renesas Electronics Corporation 功能描述: |
| UPA1901TE-T1-AT | 制造商:Renesas Electronics 功能描述:Tape & Reel 制造商:Renesas 功能描述:Trans MOSFET N-CH 30V 6.5A 6-Pin Thin-Type Mini-Mold T/R |
| UPA1901TE-T2-A | 制造商:Renesas Electronics Corporation 功能描述: |
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