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參數資料
| 型號： | UPA2680T1E |
| 廠商： | NEC Corp. |
| 英文描述： | MOSFET WITH SCHOTTKY BARRIER DIODE |
| 中文描述： | MOSFET的肖特基二極管 |
| 文件頁數： | 1/9頁 |
| 文件大小： | 212K |
| 代理商： | UPA2680T1E |
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confirm that this is the latest version.
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MOSFET WITH SCHOTTKY BARRIER DIODE
μ
PA2680T1E
N-CHANNEL MOSFET WITH SCHOTTKY BARRIER DIODE
FOR SWITCHING
DATA SHEET
Document No. G17661EJ2V0DS00 (2nd edition)
Date Published May 2007 NS CP(K)
Printed in Japan
2006
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
DESCRIPTION
The
μ
PA2680T1E is a switching device, which can be driven
directly by a 4.5 V power source.
The
μ
PA2680T1E incorporates a MOSFET which features a
low on-state resistance and excellent switching characteristics
and a low forward voltage Schottky Barrier Diode, and is
suitable for applications such as DC/DC converter of portable
machine and so on.
FEATURES
4.5 V drive available MOSFET
Low on-state resistance MOSFET
R
DS(on)1
= 38 m
Ω
TYP. (V
GS
= 10 V, I
D
= 3.0 A)
R
DS(on)2
= 44 m
Ω
TYP. (V
GS
= 4.5 V, I
D
= 3.0 A)
Low forward voltage Schottky Barrier Diode
V
F
= 0.36 V TYP. (I
F
= 1.0 A)
ORDERING INFORMATION
PART NUMBER
PACKAGE
μ
PA2680T1E
6LD3x3MLP
Marking: A2680
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
Caution
This product is electrostatic-sensitive device due to low ESD capability and should be handled with
caution for electrostatic discharge.
V
ESD
=
±
150 V TYP. (C = 200 pF, R = 0
Ω
, Single Pulse)
PIN CONNECTION (Top View)
6
5
1
2
3
4
1: Anode
2: Source/Cathode
(Heat sink 2)
3: Gate
4: Drain
(Heat sink 1)
5: Source/Cathode
(Heat sink 2)
6: Anode
相關PDF資料 |
PDF描述 |
|---|---|
| UPA2716GR | SWITCHING P-CHANNEL POWER MOSFET |
| UPA2717GR | SWITCHING P-CHANNEL POWER MOSFET |
| UPA2718GR | SWITCHING P-CHANNEL POWER MOSFET |
| UPA2719GR | SWITCHING P-CHANNEL POWER MOSFET |
| UPA2727UT1A | MOS FIELD EFFECT TRANSISTOR |
相關代理商/技術參數 |
參數描述 |
|---|---|
| UPA2690T1R | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:COMPLEMENTARY MOSFET Low on-state resistance |
| UPA2690T1R-E2-AX | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:COMPLEMENTARY MOSFET Low on-state resistance |
| UPA2700 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:UPA2700TP Data Sheet | Data Sheet[05/2002] |
| UPA2700GR | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOSFET |
| UPA2700GR-E1-A | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 30V 17A 8-Pin Power SOP Cut Tape |
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