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參數資料
| 型號： | UPA507TE |
| 廠商： | NEC Corp. |
| 英文描述： | P-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING |
| 中文描述： | P溝道MOS場效應管與肖特基二極管的開關 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 146K |
| 代理商： | UPA507TE |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
2003
MOS FET WITH SCHOTTKY BARRIER DIODE
μ
PA507TE
P-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE
FOR SWITCHING
DATA SHEET
Document No. G16626EJ1V1DS00 (1st edition)
Date Published December 2003 NS CP(K)
Printed in Japan
DESCRIPTION
The
μ
PA507TE is a switching device, which can be driven
directly by a 1.8 V power source.
This device incorporates a MOS FET, which features a low
on-state resistance and excellent switching characteristics and
a low forward voltage Schottky barrier diode, and is suitable
for applications such as DC/DC converter of portable machine
and so on.
FEATURES
1.8 V drive available (MOS FET)
Low on-state resistance (MOS FET)
R
DS(on)1
= 68 m
TYP. (V
GS
=
4.5 V, I
D
=
1.0 A)
R
DS(on)2
= 84 m
TYP. (V
GS
=
2.5 V, I
D
=
1.0 A)
R
DS(on)3
= 109 m
TYP. (V
GS
=
1.8 V, I
D
=
1.0 A)
Low forward voltage (Schottky barrier diode)
V
F
= 0.35 V TYP. (I
F
= 1.0 A)
ORDERING INFORMATION
PART NUMBER
PACKAGE
μ
PA507TE
SC-95_5p (Mini Mold Thin Type)
Marking: ZA
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with
caution for electrostatic discharge.
V
ESD
±
100 V TYP. (C = 200 pF, R = 0
, Single pulse)
PIN CONNECTION (Top View)
1
2
3
5
4
1: Gate
2: Source
3: Anode
4: Cathode
5: Drain
PACKAGE DRAWING (Unit: mm)
0.65
0.9 to 1.1
0 to 0.1
0.16
+0.1
2
1
0.95
1
2
3
5
4
1.9
0
2.9 ±0.2
0.32
+0.1
0.95
0
+
–
The mark
★
shows major revised points.
★
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| UPA611TA | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| UPA508TE | 制造商:NEC 制造商全稱:NEC 功能描述:N-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING |
| UPA53C | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| UPA54H | 制造商:Panasonic Industrial Company 功能描述:DIODE |
| UPA54HA | 制造商:Panasonic Industrial Company 功能描述:DIODE |
| UPA56C | 制造商:NEC Electronics Corporation 功能描述:Bipolar Junction Transistor, Array, DIP |
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