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參數資料
| 型號： | UPA801T-T1-A |
| 廠商： | California Eastern Laboratories |
| 英文描述： | NPN SILICON HIGH FREQUENCY |
| 中文描述： | NPN硅高頻 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 177K |
| 代理商： | UPA801T-T1-A |
UPA801T
NPN SILICON HIGH
FREQUENCY TRANSISTOR
SMALL PACKAGE STYLE:
2 NE856 Die in a 2 mm x 1.25 mm package
LOW NOISE FIGURE:
NF = 1.2 dB TYP at 1 GHz
HIGH GAIN:
|S
21E
|
2
= 9.0 dB TYP at 1 GHz
HIGH COLLECTOR CURRENT:
100mA
FEATURES
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE S06
(Top View)
2.1
±
0.1
DESCRIPTION
NEC's UPA801T is two NPN high frequency silicon epitaxial
transistors encapsulated in an ultra small 6 pin SMT package.
Each transistor is independently mounted and easily config-
ured for either dual transistor or cascode operation. The high
f
T
, low voltage bias and small size make this device ideally
suited for pager and other hand-held wireless applications.
Notes: 1.Pulsed measurement, pulse width
≤
350
μ
s, duty cycle
≤
2 %.
2.The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.
For Tape and Reel version use part number UPA801T-T1, 3K per reel.
.
Note:
Pin 3 is identified with a circle on the bottom of the package.
PIN OUT
1. Collector Transistor 1
2. Emitter Transistor 1
3. Collector Transistor 2
4. Emitter Transistor 2
5. Base Transistor 2
6. Base Transistor 1
PART NUMBER
PACKAGE OUTLINE
UPA801T
S06
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
I
CBO
Collector Cutoff Current at V
CB
= 10 V, I
E
= 0
μ
A
1.0
I
EBO
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
μ
A
1.0
h
FE1
Forward Current Gain at V
CE
= 3 V, I
C
= 7 mA
70
120
250
f
T
Gain Bandwidth at V
CE
= 3 V, I
C
= 7 mA
GHz
3.0
4.5
Cre
2
Feedback Capacitance at V
CB
= 3 V, I
E
= 0, f = 1 MHz
pF
0.7
1.5
|S
21E
|
2
Insertion Power Gain at V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
dB
7
9
NF
Noise Figure at V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
dB
1.2
2.5
h
FE1
/h
FE2
h
FE
Ratio:h
FE1
= Smaller Value of Q
1
or Q
2
h
FE2
= Larger Value pf Q
1
or Q
2
0.85
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C)
California Eastern Laboratories
1.25
±
0.1
0 ~ 0.1
0.15
0.9
±
0.1
0.7
2.0
±
0.2
0.65
1.3
1
2
3
4
5
6
0.2 (All Leads)
+0.10
- 0.05
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相關代理商/技術參數 |
參數描述 |
|---|---|
| UPA802T | 制造商:NEC 制造商全稱:NEC 功能描述:HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD |
| UPA802T_98 | 制造商:CEL 制造商全稱:CEL 功能描述:NPN SILICON HIGH FREQUENCY TRANSISTOR |
| UPA802T-A | 功能描述:射頻雙極小信號晶體管 NPN High Frequency RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發射極最大電壓 VCEO:15 V 發射極 - 基極電壓 VEBO:2 V 集電極連續電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| UPA802TC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Discrete |
| UPA802TCT1 | 制造商:NEC/CEL 功能描述:New |
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