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參數資料
| 型號： | UPA814T-T1 |
| 英文描述： | BJT |
| 中文描述： | 雙極型晶體管 |
| 文件頁數： | 1/1頁 |
| 文件大小： | 15K |
| 代理商： | UPA814T-T1 |
UPA814TF
NPN SILICON HIGH
FREQUENCY TRANSISTOR
SMALL PACKAGE OUTLINE:
SOT-363 package measures just 2.0 mm x 1.25 mm
LOW HEIGHT PROFILE:
Just 0.60 mm high
HIGH COLLECTOR CURRENT:
I
C
MAX = 100 mA
FEATURES
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE TS06
(Top View)
DESCRIPTION
The UPA814TF contains two NE688 NPN high frequency
silicon bipolar chips. NEC's new low profile TF package is ideal
for all portable wireless applicatons where reducing compo-
nent height is a prime consideration. Each transistor chip is
independently mounted and easily configured for two stage
cascade LNAs and other similar applications.
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25
°
C)
SYMBOLS
PARAMETERS
V
CBO
Collector to Base Voltage
V
CEO
Collector to Emitter Voltage
V
EBO
Emitter to Base Voltage
I
C
Collector Current
P
T
Total Power Dissipation
1 Die
2 Die
T
J
Junction Temperature
T
STG
Storage Temperature
UNITS
V
V
V
mA
RATINGS
9
6
2
100
mW
mW
°
C
°
C
110
200
150
-65 to +150
Note: 1.Operation in excess of any one of these parameters may
result in permanent damage.
PART NUMBER
PACKAGE OUTLINE
UPA814TF
TS06
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
I
CBO
I
EBO
h
FE
f
T
Cre
|S
21E
|
2
NF
Collector Cutoff Current at V
CB
= 5V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
Forward Current Gain
1
at V
CE
= 1 V, I
C
= 3 mA
Gain Bandwidth at V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz
Feedback Capacitance
2
at V
CB
= 1 V, I
E
= 0, f = 1 MHz
Insertion Power Gain at V
CE
= 3 V, I
C
=20 mA, f = 2 GHz
Noise Figure at V
CE
= 3 V, I
C
= 7 mA, f = 2 GHz
μ
A
μ
A
0.1
0.1
160
80
110
9.0
0.75
6.5
1.5
GHz
pF
dB
dB
0.85
h
FE1
/h
FE2
h
FE
Ratio:
0.85
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C)
Notes: 1. Pulsed measurement, pulse width
≤
350
μ
s, duty cycle
≤
2 %.
2. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge. For Tape and Reel version use
part number UPA814TF-T1, 3K per reel.
PIN OUT
1. Collector Transistor 1
2. Base Transistor 2
3. Collector Transistor 2
4. Emitter Transistor 2
5. Emitter Transistor 1
6. Base Transistor 1
h
FE1
= Smaller Value of Q
1
, or Q
2
h
FE2
= Larger Value of Q
1
or Q
2
2.1
±
0.1
1.25
±
0.1
0 ~ 0.1
0.13
±
0.05
0.6
±
0.1
0.45
2.0
±
0.2
0.65
1.3
1
2
3
4
5
6
(All Leads)
0.22
+0.10
- 0.05
California Eastern Laboratories
EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES
Headquarters 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 (408) 988-3500 Telex 34-6393 FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) Internet: http://WWW.CEL.COM
DATA SUBJECT TO CHANGE WITHOUT NOTICE
2/99
Note:
Pin 1 is the lower left most pin as
the package lettering is oriented
and read left to right.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| UPA814T-T1-A | 功能描述:射頻雙極小信號晶體管 NPN High Frequency RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發射極最大電壓 VCEO:15 V 發射極 - 基極電壓 VEBO:2 V 集電極連續電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| UPA81C | 制造商:NEC 制造商全稱:NEC 功能描述:LED, LAMP DRIVER NPN SILICON EPTAXIAL DARLINGTON TRANSISTOR ARRAY |
| UPA81C-A | 制造商:Renesas Electronics Corporation 功能描述: |
| UPA821 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD |
| UPA821TC | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD |
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