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參數(shù)資料
| 型號： | UPA827TF-T1-A |
| 廠商： | NEC Corp. |
| 英文描述： | NPN SILICON EPITAXIAL TWIN TRANSISTOR |
| 中文描述： | NPN硅外延雙晶體管 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 161K |
| 代理商： | UPA827TF-T1-A |
PART NUMBER
PACKAGE OUTLINE
UPA827TF
TS06
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
I
CBO
Collector Cutoff Current at V
CB
= 5 V, I
E
= 0
μ
A
0.1
I
EBO
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
μ
A
0.1
h
FE
DC Current Gain
1
at V
CE
= 2 V, I
C
= 7 mA
70
140
f
T
Gain Bandwidth (1) at V
CE
= 2 V, I
C
= 7 mA, f = 2 GHz
GHz
10
13
f
T
Gain Bandwidth (2) at V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
GHz
8.5
12
Cre
Feedback Capacitance
2
at V
CB
= 2 V, I
E
= 0, f = 1 MHz
pF
0.4
0.6
|S
21E
|
2
Insertion Power Gain (1) at V
CE
= 2 V, I
C
=7 mA, f = 2 GHz
dB
7.5
9
|S
21E
|
2
Insertion Power Gain (2) at V
CE
= 1 V, I
C
=5 mA, f = 2 GHz
dB
7
8.5
NF
Noise Figure (1) at V
CE
= 2 V, I
C
= 3 mA, f = 2 GHz
dB
1.5
2
NF
Noise Figure (2) at V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
dB
1.5
2
h
FE1/
h
FE2
h
FE
ratio, V
CE
= 2 V, I
c
= 7 mA
0.85
1.0
h
FE1
= Smaller h
FE
value between Q1 and Q2
h
FE2
= Larger h
FE
value between Q1 and Q2
UPA827TF
NPN SILICON EPITAXIAL TWIN TRANSISTOR
HIGH GAIN WITH LOW OPERATING CURRENT:
|S
21E
|
2
= 9 dB TYP at f = 2 GHz, V
CE
= 2 V, lc = 7 mA
|S
21E
|
2
= 8.5 dB TYP at f = 2 GHz, V
CE
= 1 V, lc = 5 mA
SMALL PACKAGE STYLE:
2 NE686 die in a 2 mm x 1.25 mm x 0.6 mm package
Pb-FREE
FEATURES
PRELIMINARY DATA SHEET
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C)
Notes: 1. Pulsed measurement, pulse width
≤
350
μ
s, duty cycle
≤
2 %.
2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with
emitter connected to guard pin of capacitances meter.
California Eastern Laboratories
OUTLINE DIMENSIONS
(Units in mm)
2.1
±
0.1
1.25
±
0.1
0 ~ 0.1
0.13
±
0.05
0.6
±
0.1
2.0
±
0.2
0.65
1.3
1
2
3
4
5
6
0.22
(All Leads)
+0.10
0.45
Package Outline TS06 (Top View)
PIN CONNECTIONS
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
4. Base (Q2)
5. Emitter (Q2)
6. Base (Q1)
DESCRIPTION
The UPA827TF has two built-in low-voltage transistors which
are designed for low-noise amplification in the VHF to UHF
band. The two die are chosen from adjacent locations on the
wafer. These features combined with the pin configuration
make this device ideal for balanced or mirrored applications.
This device is suitable for low voltage/low current, low noise
applications, and its high f
T
makes it an excellent choice for
portable wireless applications. The thinner package style
allows for higher density designs.
Note:
Pin 1 is the lower left most pin as
the package lettering is oriented
and read left to right.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| UPA828 | 制造商:NEC 制造商全稱:NEC 功能描述:HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5184 THIN-TYPE SMALL MINI MOLD |
| UPA828TC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Discrete |
| UPA828TD-A | 功能描述:射頻雙極小信號晶體管 NPN Silicn Amp Oscilltr Dul Trnsist RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| UPA828TD-T3-A | 功能描述:射頻雙極小信號晶體管 NPN Silicn Amp Oscilltr Dul Trnsist RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| UPA828TF | 制造商:NEC 制造商全稱:NEC 功能描述:HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5184 THIN-TYPE SMALL MINI MOLD |
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