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參數(shù)資料
| 型號(hào)： | UPA892TD |
| 英文描述： | Discrete |
| 中文描述： | 離散 |
| 文件頁數(shù)： | 1/16頁 |
| 文件大小： | 88K |
| 代理商： | UPA892TD |
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P15570EJ1V0DS00 (1st edition)
Date Published June 2001 NS CP(K)
Printed in Japan
2001
NPN SILICON RF TWIN TRANSISTOR
μ
PA891TC
NPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS)
IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUMER MINIMOLD
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
FEATURES
Built-in low phase distortion transistor suited for OSC operation
f
T
= 5.0 GHz TYP.,
S
21e
Built-in 2 transistors (2
×
2SC5600)
Flat-lead 6-pin thin-type ultra super minimold package
2
= 4.0 dB TYP. @ V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
BUILT-IN TRANSISTORS
Q1, Q2
3-pin thin-type ultra super minimold part No.
2SC5600
ORDERING INFORMATION
Part Number
Quantity
Supplying Form
μ
PA891TC
50 pcs (Non reel)
8 mm wide embossed taping
μ
PA891TC-T1
3 kpcs/reel
Pin 6 (Q1 Base), Pin 5 (Q2 Emitter), Pin 4 (Q2 Base)
face the perforation side of the tape
Remark
To order evaluation samples, consult your NEC sales representative.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (T
A
= +25
°
C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
V
CBO
9
V
Collector to Emitter Voltage
V
CEO
5.5
V
Emitter to Base Voltage
V
EBO
1.5
V
Collector Current
I
C
100
mA
Total Power Dissipation
P
tot
Note
200 in 1 element
230 in 2 elements
mW
Junction Temperature
T
j
150
°
C
Storage Temperature
T
stg
65 to +150
°
C
Note
Mounted on 1.08 cm
2
×
1.0 mm (t) glass epoxy substrate
相關(guān)PDF資料 |
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| UPA892TD-T3 | TRANSISTOR | BJT | PAIR | NPN | 3.3V V(BR)CEO | 35MA I(C) | SOT-363VAR |
| UPA893TD | TRANSISTOR | BJT | PAIR | NPN | 6V V(BR)CEO | 35MA I(C) | SOT-363VAR |
| UPA893TD-T3 | TRANSISTOR | BJT | PAIR | NPN | 6V V(BR)CEO | 35MA I(C) | SOT-363VAR |
| UPAAA-3000 | TASTKODIERSCHALTER DEZIMAL |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPA892TD-T3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PAIR | NPN | 3.3V V(BR)CEO | 35MA I(C) | SOT-363VAR |
| UPA893TD | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PAIR | NPN | 6V V(BR)CEO | 35MA I(C) | SOT-363VAR |
| UPA893TD-T3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PAIR | NPN | 6V V(BR)CEO | 35MA I(C) | SOT-363VAR |
| UPA895TD | 功能描述:射頻雙極小信號(hào)晶體管 NPN Dual High Freq RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| UPA895TD-A | 功能描述:射頻雙極小信號(hào)晶體管 NPN Dual High Freq RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
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