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參數(shù)資料
| 型號： | UPD43257BGU-70LL |
| 廠商： | NEC Corp. |
| 英文描述： | 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT |
| 中文描述： | 256K位CMOS靜態(tài)RAM 32K的詞8位 |
| 文件頁數(shù)： | 1/20頁 |
| 文件大?。?/td> | 157K |
| 代理商： | UPD43257BGU-70LL |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
1992
MOS INTEGRATED CIRCUIT
μ
PD43257B
256K-BIT CMOS STATIC RAM
32K-WORD BY 8-BIT
DATA SHEET
Document No. M10693EJ7V0DS00 (7th edition)
Date Published June 2000 NS CP (K)
Printed in Japan
The mark
#
shows major revised points.
Description
The
μ
PD43257B is a high speed, low power, and 262,144 bits (32,768 words by 8 bits) CMOS static RAM.
Battery backup is available. And the
μ
PD43257B has two chip enable pins (/CE1, CE2) to extend the capacity.
The
μ
PD43257B is packed in 28-pin plastic DIP and 28-pin plastic SOP.
Features
32,768 words by 8 bits organization
Fast access time: 70, 85 ns (MAX.)
Low V
CC
data retention: 2.0 V (MIN.)
Two Chip Enable inputs: /CE1, CE2
Part number
Access time
Operating supply
Operating ambient
Supply current
ns (MAX.)
voltage
temperature
At operating
At standby
At data retention
V
°C
mA (MAX.)
μ
A (MAX.)
μ
A (MAX.)
Note
μ
PD43257B-xxL
70, 85
4.5 to 5.5
0 to 70
45
50
3
μ
PD43257B-xxLL
45
15
2
Note
T
A
≤
40
°
C, V
CC
= 3.0 V
Version X
This Data sheet can be applied to the version X. This version is identified with its lot number. Letter X in the fifth
character position in a lot number signifies version X.
X
D43257B
Lot number
JAPAN
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| UPD43257BGU-85L | 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT |
| UPD43257BGU-85LL | 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT |
| UPD43257BCZ-70L | 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT |
| UPD43257BCZ-70LL | 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT |
| UPD442002-X | 2M-BIT CMOS STATIC RAM 128K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION |
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