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參數資料
型號: UPD442000AGU-DD85X-9JH
廠商: NEC Corp.
元件分類: 圓形連接器
英文描述: Circular Connector; No. of Contacts:10; Series:MS27468; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:13; Circular Contact Gender:Pin; Circular Shell Style:Jam Nut Receptacle; Insert Arrangement:13-98 RoHS Compliant: No
中文描述: 200萬位CMOS靜態RAM 256K字× 8位擴展工作溫度
文件頁數: 1/28頁
文件大小: 157K
代理商: UPD442000AGU-DD85X-9JH
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
2000
2M-BIT CMOS STATIC RAM
256K-WORD BY 8-BIT
EXTENDED TEMPERATURE OPERATION
MOS INTEGRATED CIRCUIT
PD442000A-X
DATA SHEET
Document No. M14669EJ7V0DS00 (7th edition)
Date Published October 2002 NS CP (K)
Printed in Japan
The mark 5
5
5 shows major revised points.
Description
The
PD442000A-X is a high speed, low power, 2,097,152 bits (262,144 words by 8 bits) CMOS static RAM.
The
PD442000A-X has two chip enable pins (/CE1, CE2) to extend the capacity. And battery backup is available.
The
PD442000A-X is packed in 32-pin PLASTIC TSOP (I) (Normal bent) and 32-pin PLASTIC TSOP (I) (Reverse
bent).
Features
262,144 words by 8 bits organization
Fast access time : 55, 70, 85, 100, 120 ns (MAX.)
Low voltage operation : VCC = 2.7 to 3.6 V (-BB55X, -BB70X, -BB85X)
VCC = 2.2 to 3.6 V (-BC70X, -BC85X, -BC10X)
VCC = 1.8 to 2.2 V (-DD85X, -DD10X, -DD12X)
Low VCC data retention : 1.0 V (MIN.)
Operating ambient temperature : TA = –25 to +85 °C
Output Enable input for easy application
Two Chip Enable inputs : /CE1, CE2
PD442000A
Access time
Operating supply Operating ambient
Supply current
ns (MAX.)
voltage
temperature
At operating
At standby
At data retention
V°C
mA (MAX.)
A (MAX.)
-BB55X, -BB70X, -BB85X
55, 70, 85
2.7 to 3.6
25 to +85
30
Note
21
-BC70X, -BC85X, -BC10X
70, 85, 100
2.2 to 3.6
30
-DD85X, -DD10X, -DD12X
85, 100, 120
1.8 to 2.2
15
1.5
Note Cycle time
≥ 70 ns, -BB55X : 35 mA
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