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參數資料
型號: UPD44325364F5-E40-EQ2
廠商: NEC Corp.
英文描述: CABLE ASSEMBLY; LEAD-FREE SOLDER; SMA MALE TO SMA MALE; 50 OHM, RG142B/U COAX, DOUBLE SHIELDED
中文描述: 36M條位推出QDRII SRAM的4個字爆發運作
文件頁數: 1/36頁
文件大?。?/td> 377K
代理商: UPD44325364F5-E40-EQ2
The mark shows major revised points.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
MOS INTEGRATED CIRCUIT
μ
PD
44325084, 44325094, 44325184, 44325364
36M-BIT QDR
TM
II SRAM
4-WORD BURST OPERATION
Document No. M16784EJ1V0DS00 (1st edition)
Date Published October 2004 NS CP(K)
Printed in Japan
PRELIMINARY DATA SHEET
2003
Description
The
μ
PD44325084 is a 4,194,304-word by 8-bit, the
μ
PD44325094 is a 4,194,304-word by 9-bit, the
μ
PD44325184 is a
2,097,152-word by 18-bit and the
μ
PD44325364 is a 1,048,576-word by 36-bit synchronous quad data rate static RAM
fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.
The
μ
PD44325084,
μ
PD44325094,
μ
PD44325184 and
μ
PD44325364 integrate unique synchronous peripheral
circuitry and a burst counter. All input registers controlled by an input clock pair (K and /K) are latched on the positive
edge of K and /K.
These products are suitable for application which require synchronous operation, high speed, low voltage, high density
and wide bit configuration.
These products are packaged in 165-pin PLASTIC FBGA.
Features
1.8 ± 0.1 V power supply and HSTL I/O
DLL circuitry for wide output data valid window and future frequency scaling
Separate independent read and write data ports with concurrent transactions
100% bus utilization DDR READ and WRITE operation
Four-tick burst for reduced address frequency
Two input clocks (K and /K) for precise DDR timing at clock rising edges only
Two output clocks (C and /C) for precise flight time
and clock skew matching-clock and data delivered together to receiving device
Internally self-timed write control
Clock-stop capability with
μ
s restart
User programmable impedance output
Fast clock cycle time : 3.3 ns (300 MHz) , 4.0 ns (250 MHz) , 5.0 ns (200 MHz)
Simple control logic for easy depth expansion
JTAG boundary scan
相關PDF資料
PDF描述
UPD44325084F5-E40-EQ2 36M-BIT QDRII SRAM 4-WORD BURST OPERATION
UPD44325184F5-E40-EQ2 36M-BIT QDRII SRAM 4-WORD BURST OPERATION
UPD44325084F5-E50-EQ2 36M-BIT QDRII SRAM 4-WORD BURST OPERATION
UPD44325184F5-E50-EQ2 36M-BIT QDRII SRAM 4-WORD BURST OPERATION
UPD44325094F5-E40-EQ2 36M-BIT QDRII SRAM 4-WORD BURST OPERATION
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