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參數資料
型號: V54C3128164VB6
廠商: MOSEL-VITELIC
元件分類: DRAM
英文描述: 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA60
封裝: WBGA-60
文件頁數: 1/45頁
文件大?。?/td> 871K
代理商: V54C3128164VB6
MOSEL VITELIC
1
V54C3128(16/80/40)4V(BGA)
128Mbit SDRAM
3.3 VOLT, BGA PACKAGE
8M X 16
16M X 8
32M X 4
V54C3128(16/80/40)4V(BGA) Rev. 1.2 September 2001
PRELIMINARY
67PC
78PC
System Frequency (fCK)
166 MHz
143 MHz
125 MHz
Clock Cycle Time (tCK3)
6 ns
7 ns
8 ns
Clock Access Time (tAC3)CAS Latency = 3
5.4 ns
6 ns
Clock Access Time (tAC2) CAS Latency = 2
5.4 ns
6 ns
Features
s 4 banksx2Mbit x16 organization
s 4 banks x 4Mbit x 8 organization
s 4 banks x 8Mbit x 4 organization
s High speed data transfer rates up to 166 MHz
s Full Synchronous Dynamic RAM, with all signals
referenced to clock rising edge
s Single Pulsed RAS Interface
s Data Mask for Read/Write Control
s Four Banks controlled by BA0 & BA1
s Programmable CAS Latency: 2, 3
s Programmable Wrap Sequence: Sequential or
Interleave
s Programmable Burst Length:
1, 2, 4, 8 for Sequential Type
1, 2, 4, 8 for Interleave Type
s Multiple Burst Read with Single Write Operation
s Automatic and Controlled Precharge Command
s Random Column Address every CLK (1-N Rule)
s Power Down Mode
s Auto Refresh and Self Refresh
s Refresh Interval: 4096 cycles/64 ms
s Availablein60Pin WBGA
s LVTTL Interface
s Single +3.3 V
±0.3 V Power Supply
Description
The V54C3128(16/80/40)4V(BGA) is a four bank
Synchronous DRAM organized as 4 banks x 2Mbit
x 16, 4 banks x 4Mbit x 8, or 4 banks x 8Mbit x 4.
The V54C3128(16/80/40)4V(BGA) achieves high
speed data transfer rates up to 166 MHz by employ-
ing a chip architecture that prefetches multiple bits
and then synchronizes the output data to a system
clock
All of the control, address, data input and output
circuits are synchronized with the positive edge of
an externally supplied clock.
Operating the four memory banks in an inter-
leaved fashion allows random access operation to
occur at higher rate than is possible with standard
DRAMs. A sequential and gapless data rate of up to
166 MHz is possible depending on burst length,
CAS latency and speed grade of the device.
Device Usage Chart
Operating
Temperature
Range
Package Outline
Access Time (ns)
Power
Temperature
Mark
B6
7PC
7
8PC
Std.
L
0
°Cto 70°C
Blank
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相關代理商/技術參數
參數描述
V54C3128164VBGA 制造商:MOSEL 制造商全稱:MOSEL 功能描述:128Mbit SDRAM 3.3 VOLT, BGA PACKAGE
V54C3128164VBI7 制造商:PROMOS 功能描述: 制造商:ProMOS Technologies Inc 功能描述:8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
V54C3128164VS 制造商:MOSEL 制造商全稱:MOSEL 功能描述:128Mbit SDRAM 3.3 VOLT, TSOP II / SOC PACKAGE 8M X 16, 16M X 8, 32M X 4
V54C3128164VT 制造商:MOSEL 制造商全稱:MOSEL 功能描述:128Mbit SDRAM 3.3 VOLT, TSOP II / SOC PACKAGE 8M X 16, 16M X 8, 32M X 4
V54C3128404VBGA 制造商:MOSEL 制造商全稱:MOSEL 功能描述:128Mbit SDRAM 3.3 VOLT, BGA PACKAGE
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