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參數資料
| 型號： | VBP104FASR |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 光敏二極管 |
| 英文描述： | Photo Diode, PIN PHOTO DIODE, ROHS COMPLIANT, SMD, 2 PIN |
| 中文描述： | Photodiodes 60V 215mW 65Deg |
| 文件頁數： | 1/8頁 |
| 文件大小： | 154K |
| 代理商： | VBP104FASR |
VBP104FAS, VBP104FASR
Vishay Semiconductors
www.vishay.com
Rev. 1.2, 24-Aug-11
1
Document Number: 81169
For technical questions, contact:
detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
Silicon PIN Photodiode
DESCRIPTION
VBP104FAS and VBP104FASR are high speed and high
sensitive PIN photodiodes. It is a surface mount device
(SMD) including the chip with a 4.4 mm
2
sensitive area and
a daylight blocking filter matched with IR emitters operating
at wavelength 870 nm or 950 nm.
FEATURES
Package type: surface mount
Package form: GW, RGW
Dimensions (L x W x H in mm): 6.4 x 3.9 x 1.2
Radiant sensitive area (in mm
2
): 4.4
High radiant sensitivity
Daylight blocking filter matched with 870 nm to
950 nm emitters
Fast response times
Angle of half sensitivity:
= ± 65°
Floor life: 168 h, MSL 3, acc. J-STD-020
Lead (Pb)-free reflow soldering
Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Hologen-free according to IEC 61249-2-21 definition
APPLICATIONS
High speed detector for infrared radiation
Infrared
remote
transmissionsystems, e.g. in combination with TSFFxxxx
series IR emitters
control
and
free
air
data
Note
Test conditions see table “Basic Characteristics”
Note
MOQ: minimum order quantity
21726-1
VBP104FAS
VBP104FASR
PRODUCT SUMMARY
COMPONENT
V
BP104FAS
V
BP104FASR
I
ra
(μA)
35
35
(deg)
± 65
± 65
λ
0.5 (nm)
780 to 1050
780 to 1050
ORDERING INFORMATION
ORDERING CODE
V
BP104FAS
V
BP104FASR
PACKAGING
Tape and reel
Tape and reel
REMARKS
PACKAGE FORM
Gullwing
Reverse gullwing
MOQ: 1000 pcs, 1000 pcs/reel
MOQ: 1000 pcs, 1000 pcs/reel
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Reverse voltage
Power dissipation
T
amb
≤
25 °C
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Acc. reflow sloder profile fig. 8
Thermal resistance junction/ambient
SYMBOL
V
R
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
VALUE
60
215
100
- 40 to + 100
- 40 to + 100
260
350
UNIT
V
mW
°C
°C
°C
°C
K/W
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PDF描述 |
|---|---|
| VBP104S | Photo Diode, PIN PHOTO DIODE, ROHS COMPLIANT, SMD, 2 PIN |
| VBP104SR | Photo Diode, PIN PHOTO DIODE, ROHS COMPLIANT, SMD, 2 PIN |
| VBPW34FASR | Photo Diode, PHOTO DIODE, 6.40 X 3.90 MM, 1.20 MM HEIGHT, ROHS COMPLIANT, SMD, 2 PIN |
| VBPW34FAS | Photo Diode, PHOTO DIODE, 6.40 X 3.90 MM, 1.20 MM HEIGHT, ROHS COMPLIANT, SMD, 2 PIN |
| VBPW34SR | Photo Diode, PHOTO DIODE, 6.40 X 3.90 MM, 1.20 MM HEIGHT, ROHS COMPLIANT, SMD, 2 PIN |
相關代理商/技術參數 |
參數描述 |
|---|---|
| VBP104S | 功能描述:光電二極管 60V 215mW 65Deg RoHS:否 制造商:Vishay Semiconductors 產品:Photodiodes 反向電壓:10 V 最大暗電流:30 nA 峰值波長:565 nm 上升時間:3.1 us 下降時間:3 us 半強度角度:50 deg 封裝 / 箱體:TO-5 |
| VBP104S_11 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Silicon PIN Photodiode |
| VBP104SR | 功能描述:光電二極管 60V 215mW 65Deg RoHS:否 制造商:Vishay Semiconductors 產品:Photodiodes 反向電壓:10 V 最大暗電流:30 nA 峰值波長:565 nm 上升時間:3.1 us 下降時間:3 us 半強度角度:50 deg 封裝 / 箱體:TO-5 |
| VBP-HH1-V3.0-110V | 制造商:PEPPERL+FUCHS 功能描述:Interface, AS-Interface 制造商:PEPPERL+FUCHS 功能描述:AS-Interface (excluding sensors) |
| VBPW34FAS | 功能描述:光電二極管 60V 215mW 65Deg RoHS:否 制造商:Vishay Semiconductors 產品:Photodiodes 反向電壓:10 V 最大暗電流:30 nA 峰值波長:565 nm 上升時間:3.1 us 下降時間:3 us 半強度角度:50 deg 封裝 / 箱體:TO-5 |
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