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參數(shù)資料
| 型號(hào)： | VG26S17400FJ-5 |
| 廠商： | VANGUARD INTERNATIONAL SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 4,194,304 x 4 - Bit CMOS Dynamic RAM |
| 中文描述： | 4M X 4 FAST PAGE DRAM, 50 ns, PDSO24 |
| 封裝： | 0.300 INCH, PLASTIC, SOJ-26/24 |
| 文件頁(yè)數(shù)： | 1/25頁(yè) |
| 文件大小： | 225K |
| 代理商： | VG26S17400FJ-5 |
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Document :
Rev.
Page 1
VIS
VG26(V)(S)17400FJ
4,194,304 x 4 - Bit
CMOS Dynamic RAM
Description
The device is CMOS Dynamic RAM organized as 4,194,304 words x 4 bits. It is fabricated
with an advanced submicron CMOS technology and designed to operate from a single 5V only
or 3.3V only power supply. Low voltage operation is more suitable to be used on battery
backup, portable electronic application. A new refresh feature called “ self-refresh “ is supported
and very slow CBR cycles are being performed. It is packaged in JEDEC standard 26/24 - pin
plastic SOJ or TSOP (II).
Features
Single 5V (
%) or 3.3V (+10%,-5%) only power supply
High speed t
RAC
access time : 50/60 ns
Low power dissipation
- Active mode : 5V version 605/550 mW (Max.)
3.3V version 396/360 mW (Max.)
- Standby mode : 5V version 1.375 mW (Max.)
3.3V version 0.54 mW (Max.)
Fast Page Mode access
I/O level : TTL compatible (Vcc = 5V)
LVTTL compatible (Vcc = 3.3V)
2048 refresh cycles in 32 ms (Std) or 128ms (S - version)
4 refresh mode :
- RAS only refresh
- CAS-before-RAS refresh
- Hidden refresh
- Self - refresh (S - version)
10
±
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相關(guān)代理商/技術(shù)參數(shù) |
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| VG26S17400FJ-6 | 制造商:VML 制造商全稱:VML 功能描述:4,194,304 x 4 - Bit CMOS Dynamic RAM |
| VG26S17405DJ-5 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:DRAM|EDO|4MX4|CMOS|SOJ|26PIN|PLASTIC |
| VG26S17405DJ-6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 EDO Page Mode DRAM |
| VG26S17405DT-5 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 EDO Page Mode DRAM |
| VG26S17405DT-6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 EDO Page Mode DRAM |
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