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參數(shù)資料
| 型號(hào)： | VNQ600AP |
| 英文描述： | QUAD CHANNEL HIGH SIDE SOLID STATE RELAY |
| 中文描述： | 四通道高邊固態(tài)繼電器 |
| 文件頁(yè)數(shù)： | 1/18頁(yè) |
| 文件大小： | 340K |
| 代理商： | VNQ600AP |
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October 2003 - Revision 1.3 (Working document)
This is preliminary information on a new product foreseen to be developed. Details are subject to change without notice.
1/18
P
VNQ600AP
QUAD CHANNEL HIGH SIDE SOLID STATE RELAY
(*) Per each channel
I
DC SHORT CIRCUIT CURRENT: 25A
I
CMOS COMPATIBLE INPUTS
I
PROPORTIONAL LOAD CURRENT SENSE
I
UNDERVOLTAGE & OVERVOLTAGE
n
SHUT-DOWN
I
OVERVOLTAGE CLAMP
I
THERMAL SHUT-DOWN
I
CURRENT LIMITATION
I
VERY LOW STAND-BY POWER DISSIPATION
I
PROTECTION AGAINST:
n
LOSS OF GROUND & LOSS OF V
CC
I
REVERSE BATTERY PROTECTION (**)
DESCRIPTION
The VNQ600AP is a quad HSD formed by
assembling two VND600 chips in the same SO-28
package. The VND600 is a monolithic device
designed in
|
STMicroelectronics VIPower M0-3
Technology. The VNQ600A is intended for driving
any type of multiple loads with one side connected
to ground. This device has four independent
channels and four analog sense outputs which
deliver currents proportional to the outputs
currents. Active current limitation combined with
thermal shut-down and automatic restart protect
the device against overload. Device automatically
turns off in case of ground pin disconnection.
TYPE
R
DS(on)
(*)
35m
I
lim
25A
V
CC
36 V
VNQ600AP
ABSOLUTE MAXIMUM RATING
(**) See application schematic at page 9.
Symbol
V
CC
-V
CC
I
OUT
I
R
I
IN
Parameter
Value
41
-0.3
15
-15
+/- 10
-3
+15
-200
Unit
V
V
A
A
mA
V
V
mA
Supply voltage (continuous)
Reverse supply voltage (continuous)
Output current (continuous), for each channel
Reverse output current (continuous), for each channel
Input current
V
CSENSE
Current sense maximum voltage
I
GND
Ground current at T
pins
< 25
°C (continuous)
Electrostatic Discharge (Human Body Model: R=1.5K
;
C=100pF)
- INPUT
- CURRENT SENSE
- OUTPUT
- V
CC
Maximum Switching Energy
(L=0.11mH; R
L
=0
; V
bat
=13.5V; T
jstart
=150oC; I
L
=40A)
Power dissipation (per island) at T
lead
=25°C
Junction operating temperature
Storage temperature
V
ESD
4000
2000
5000
5000
V
V
V
V
E
MAX
126
mJ
P
tot
T
j
T
stg
6.25
W
°C
°C
Internally Limited
-55 to 150
SO-28 (DOUBLE ISLAND)
ORDER CODES
TUBE
VNQ600AP
PACKAGE
SO-28
T&R
VNQ600AP13TR
TARGET SPECIFICATION
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| VNQ600P | QUAD CHANNEL HIGH SIDE SOLID STATE RELAY |
| VNQ690SP13TR | QUAD CHANNEL HIGH SIDE SOLID STATE RELAY |
| VNS1NV04D13TR | TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | SO |
| VNS3NV04D13TR | TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | SO |
| VO0631T | VO0600T, VO0601T, VO0611T, VO0630T, VO0631T, VO0661T - High Speed Optocoupler, 10 MBd, SOIC-8 Package |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| VNQ600AP13TR | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:QUAD CHANNEL HIGH SIDE SOLID STATE RELAY |
| VNQ600AP-E | 功能描述:電源開(kāi)關(guān) IC - 配電 QUAD CH HI-SIDE DRVR RoHS:否 制造商:Exar 輸出端數(shù)量:1 開(kāi)啟電阻（最大值）:85 mOhms 開(kāi)啟時(shí)間（最大值）:400 us 關(guān)閉時(shí)間（最大值）:20 us 工作電源電壓:3.2 V to 6.5 V 電源電流（最大值）: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23-5 |
| VNQ600APTR-E | 功能描述:功率驅(qū)動(dòng)器IC QUAD CH HI-SIDE DRVR RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類(lèi)型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| VNQ600ATR | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:QUAD CHANNEL HIGH SIDE SOLID STATE RELAY |
| VNQ600ATR-E | 功能描述:功率驅(qū)動(dòng)器IC Quad Channel Hi-Side RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類(lèi)型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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