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參數資料
| 型號： | W24512AT-20 |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | SRAM |
| 英文描述： | 64K X 8 HIGH SPEED CMOS STATIC RAM |
| 中文描述： | 64K X 8 STANDARD SRAM, 20 ns, PDSO32 |
| 封裝： | TSOP1-32 |
| 文件頁數： | 2/10頁 |
| 文件大小： | 214K |
| 代理商： | W24512AT-20 |
W24512A
- 2 -
TRUTH TABLE
CS1
H
X
L
L
L
CS2
X
L
H
H
H
OE
X
X
H
L
X
WE
X
X
H
H
L
MODE
I/O1
I/O8
High Z
High Z
High Z
Data Out
Data In
V
DD
CURRENT
I
SB
, I
SB1
I
SB
, I
SB1
I
DD
I
DD
I
DD
Not Selected
Not Selected
Output Disable
Read
Write
DC CHARACTERISTICS
Absolute Maximum Ratings
PARAMETER
RATING
-0.5 to +7.0
-0.5 to V
DD
+0.5
1.0
-65 to +150
0 to +70
UNIT
V
V
W
°
C
°
C
Supply Voltage to V
SS
Potential
Input/Output to V
SS
Potential
Allowable Power Dissipation
Storage Temperature
Operating Temperature
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability of the
device.
Operating Characteristics
(V
DD
= 5V
±
10%, V
SS
= 0V, T
A
= 0 to 70
°
C)
PARAMETER
Input Low Voltage
Input High Voltage
Input Leakage Current
Output Leakage
Current
SYM.
V
IL
V
IH
I
LI
I
LO
TEST CONDITIONS
-
-
V
IN
= V
SS
to V
DD
V
I/O
= V
SS
to V
DD
CS1 = V
IH (min.)
or
CS2 = V
IL (max.)
or
OE = V
IH (min.)
or
WE = V
IL (max.)
I
OL
= +8.0 mA
I
OH
= -4.0 mA
CS1 = V
IL (max.)
,
CS2 = V
IH (min.)
I/O = 0mA, Cycle = min
Duty = 100%
CS1 = V
IH (min.)
or
CS2 = V
IL (max.)
Cycle = min, Duty = 100%
CS1
≥
V
DD
-0.2V or
CS2
≤
0.2V
MIN.
-0.5
+2.2
-10
-10
TYP.
-
-
-
-
MAX.
+0.8
V
DD
+0.5
+10
+10
UNIT
V
V
μ
A
μ
A
Output Low Voltage
Output High Voltage
Operating Power
Supply Current
V
OL
V
OH
-
-
-
0.4
-
V
V
2.4
I
DD
-
-
160
mA
Standby Power
Supply Current
I
SB
-
-
30
mA
I
SB1
-
-
10
mA
Note: Typical characteristics are at V
DD
= 5V, T
A
= 25
°
C.
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