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參數(shù)資料
| 型號(hào)： | W24L11T-70LL |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | SRAM |
| 英文描述： | 128K X 8 High Speed CMOS Static RAM |
| 中文描述： | 128K X 8 STANDARD SRAM, 70 ns, PDSO32 |
| 封裝： | 8 X 20 MM, TSOP1-32 |
| 文件頁(yè)數(shù)： | 2/11頁(yè) |
| 文件大小： | 170K |
| 代理商： | W24L11T-70LL |
Preliminary W24L11
- 2 -
TRUTH TABLE
CS1
H
X
L
L
L
CS2
OE
X
X
H
L
X
WE
X
X
H
H
L
MODE
I/O1 I/O8
High Z
High Z
High Z
Data Out
Data In
V
DD
CURRENT
X
L
H
H
H
Not Selected
Not Selected
Output Disable
Read
Write
I
SB
, I
SB1
I
SB
, I
SB1
I
DD
I
DD
I
DD
DC CHARACTERISTICS
Absolute Maximum Ratings
PARAMETER
RATING
-0.5 to +4.6
-0.5 to V
DD
+0.5
1.0
-65 to +150
UNIT
V
V
W
°
C
°
C
Supply Voltage to V
SS
Potential
Input/Output to V
SS
Potential
Allowable Power Dissipation
Storage Temperature
Operating Temperature
0 to 70
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability of the
device.
Operating Characteristics
(V
DD
= 3.0V to 3.6V; V
SS
= 0V; T
A
(
°
C) = 0 to 70)
PARAMETER
SYM.
TEST CONDITIONS
MIN.
MAX.
UNIT
Input Low Voltage
Input High Voltage
Input Leakage Current
V
IL
V
IH
I
LI
-
-
-0.5
+2.0
-1
+0.6
V
DD
+0.5
+1
V
V
V
IN
= V
SS
to V
DD
μ
A
μ
A
Output Leakage Current
I
LO
VI/O = V
SS
to V
DD
,
CS1
= V
IH
(min.) or
CS2 = V
IL
(max.) or
OE = V
IH
(min.) or
WE
= V
IL
(max.)
-1
+1
Output Low Voltage
Output High Voltage
Operating Power Supply
Current
V
OL
V
OH
I
DD
I
OL
= +2.1 mA
I
OH
= -1.0 mA
-
0.4
-
40
V
V
mA
2.2
-
CS1 = V
IL
(max.) and
CS2 = V
IH
(min.), I/O = 0 mA,
Cycle = min. Duty = 100%
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