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參數(shù)資料
| 型號(hào)： | W24LH8 |
| 廠商： | WINBOND ELECTRONICS CORP |
| 英文描述： | Normal speed, Very low power CMOS static RAM Organized as 32768 x 8 bits |
| 中文描述： | 正常速度，極低功耗CMOS靜態(tài)RAM有組織為32768 × 8位 |
| 文件頁(yè)數(shù)： | 2/10頁(yè) |
| 文件大小： | 198K |
| 代理商： | W24LH8 |
W24LH8
- 2 -
TRUTH TABLE
#CS
#OE
#WE
MODE
I/O1
-
I/O8
V
DD
CURRENT
H
X
X
Not Selected
High Z
I
SB
, I
SB
1
L
H
H
Output Disable
High Z
I
DD
L
L
H
Read
Data Out
I
DD
L
X
L
Write
Data In
I
DD
DC CHARACTERISTICS
Absolute Maximum Ratings
PARAMETER
RATING
UNIT
Supply Voltage to V
SS
Potential
-0.5 to +7.0
V
Input/Output to V
SS
Potential
-0.5 to V
DD
+0.5
V
Allowable Power Dissipation
1.0
W
Storage Temperature
-65 to +150
°
C
°
C
°
C
Operating Temperature
LE
-20 to 85
LI
-40 to 85
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability
of the device.
Operating Characteristics
(V
SS
= 0V; T
A
(
°
C) = -20 to 85 for LE; -40 to 85 for LI)
PARAMETER
SYM.
TEST CONDITIONS
MIN.
MAX.
UNIT
Input Low Voltage
V
IL
-
-0.5
+0.6
V
Input High Voltage
V
IH
-
+2.0
V
DD
+0.5
V
Input Leakage Current
I
LI
V
IN
= V
SS
to V
DD
-1
+1
μ
A
μ
A
Output Leakage Current
I
LO
V
I/O
= V
SS
to V
DD,
#CS = V
IH
(min.) or
#OE = V
IH
(min.) or
#WE = V
IL
(max.)
-1
+1
Output Low Voltage
V
OL
I
OL
= +2.1 mA
-
0.4
V
Output High Voltage
V
OH
I
OH
= -1.0 mA
2.2
-
V
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| W24LH8Q-55LE | Normal speed, Very low power CMOS static RAM Organized as 32768 x 8 bits |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W24LH8Q-55LE | 制造商:WINBOND 制造商全稱:Winbond 功能描述:Normal speed, Very low power CMOS static RAM Organized as 32768 x 8 bits |
| W24LH8Q-55LI | 制造商:WINBOND 制造商全稱:Winbond 功能描述:Normal speed, Very low power CMOS static RAM Organized as 32768 x 8 bits |
| W24LH8S-55LE | 制造商:WINBOND 制造商全稱:Winbond 功能描述:Normal speed, Very low power CMOS static RAM Organized as 32768 x 8 bits |
| W24LH8S-55LI | 制造商:WINBOND 制造商全稱:Winbond 功能描述:Normal speed, Very low power CMOS static RAM Organized as 32768 x 8 bits |
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