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參數(shù)資料
| 型號： | W25S243AD-12 |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | SRAM |
| 英文描述： | RECTIFIER FAST-RECOVERY SINGLE 1.5A 100V 50A-ifsm 1.2V-vf 150ns 5uA-ir DO-41 1K/BULK |
| 中文描述： | 64K X 64 STANDARD SRAM, 12 ns, PQFP128 |
| 封裝： | TQFP-128 |
| 文件頁數(shù)： | 5/17頁 |
| 文件大小： | 303K |
| 代理商： | W25S243AD-12 |
Preliminary W25S243A
Publication Release Date: November 1998
- 5 -
Revision A1
Truth Table, continued
CYCLE
ADDRESS
USED
CE1
CE2
CE3
ADSP
ADSC
ADV
OE
DATA
WRITE*
Begin Write
Current
X
X
X
1
1
1
X
Hi-Z
Write
Begin Write
Current
1
X
X
X
1
1
X
Hi-Z
Write
Begin Write
External
0
1
0
1
0
X
X
Hi-Z
Write
Continue Write
Next
X
X
X
1
1
0
X
Hi-Z
Write
Continue Write
Next
1
X
X
X
1
0
X
Hi-Z
Write
Suspend Write
Current
X
X
X
1
1
1
X
Hi-Z
Write
Suspend Write
Current
1
X
X
X
1
1
X
Hi-Z
Write
Notes:
1. For a detailed definition of read/write, see the Write Table below.
2. An "X" means don't care, "1" means logic high, and "0" means logic low.
3. The OE pin enables the data output but is not synchronous with the clock. All signals of the SRAM are sampled synchronous to
the bus clock except for theOE pin.
4. On a write cycle that follows a read cycle, OE must be inactive prior to the start of write cycle to allow write data to setup
the SRAM. OE must also disable the output buffer prior to the finish of a write cycle to ensure the SRAM data hold timings are
met.
WRITE TABLE
READ/WRITE FUNCTION
GW
1
1
1
BWE
1
0
0
BW8
X
1
1
BW7
X
1
1
BW6
X
1
1
BW5
X
1
1
BW4
X
1
1
BW3
X
1
1
BW2
X
1
1
BW1
X
1
0
Read
Read
Write byte 1 I/O1
I/O8
Write byte 2 I/O9
I/O16
Write byte 2, byte 1
1
0
1
1
1
1
1
1
0
1
1
1
0
0
1
1
1
1
1
1
1
1
1
1
1
0
0
1
0
1
Write byte 3 I/O17
I/O24
Write byte 3, byte 1
Write byte 3, byte 2
Write byte 3, byte 2, byte 1
1
1
1
1
0
0
0
0
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
1
1
0
0
1
0
1
0
1
Write byte 4, I/O25
I/O32
Write byte 4, byte 1
Write byte 4, byte 2
Write byte 4, byte 2, byte 1
Write byte 4, byte 3
Write byte 4, byte 3, byte 1
Write byte 4, byte 3, byte 2
Write byte 4, byte 3, byte 2, byte 1
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
1
1
1
1
0
0
0
0
1
1
0
0
1
1
0
0
1
0
1
0
1
0
1
0
1
Write byte 5, I/O33
I/O40
Write byte 5, byte 1
1
0
1
1
1
0
1
1
1
0
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相關(guān)代理商/技術(shù)參數(shù) |
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| W25S243AF-12 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:64K X 64 BURST PIPELINED HIGH-SPEED CMOS STATIC RAM |
| W25X10 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:The W25X10 (1M-bit), W25X20 (2M-bit), W25X40 (4M-bit) and W25X80 (8M-bit) Serial Flash memories provide a storage solution for systems with limited space, pins and power. |
| W25X10_07 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:1M-BIT, 2M-BIT, 4M-BIT AND 8M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI |
| W25X10_08 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:1M-BIT, 2M-BIT, 4M-BIT AND 8M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI |
| W25X10A | 制造商:WINBOND 制造商全稱:Winbond 功能描述:1M-BIT, 2M-BIT, 4M-BIT AND 8M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI |
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