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參數資料
| 型號： | W25S243AD-12 |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | SRAM |
| 英文描述： | RECTIFIER FAST-RECOVERY SINGLE 1.5A 100V 50A-ifsm 1.2V-vf 150ns 5uA-ir DO-41 1K/BULK |
| 中文描述： | 64K X 64 STANDARD SRAM, 12 ns, PQFP128 |
| 封裝： | TQFP-128 |
| 文件頁數： | 7/17頁 |
| 文件大小： | 303K |
| 代理商： | W25S243AD-12 |
Preliminary W25S243A
Publication Release Date: November 1998
- 7 -
Revision A1
DC CHARACTERISTICS
Absolute Maximum Ratings
PARAMETER
RATING
-0.5 to 4.6
-0.5 to 4.6
UNIT
V
V
V
W
°
C
°
C
Core Supply Voltage to Vss
I/O Supply Voltage to Vss
Input/Output to V
SSQ
Potential
Allowable Power Dissipation
Storage Temperature
Operating Temperature
V
SSQ
-0.5 to V
DDQ
+0.5
1.0
-65 to 150
0 to +70
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability of the
device.
Operating Characteristics
(V
DD
/V
DDQ
= 3.15V to 3.6V, V
SS
/V
SSQ
= 0V, T
A
= 0 to 70
°
C)
PARAMETER
Input Low Voltage
Input High Voltage
SYM.
V
IL
V
IH
TEST CONDITIONS
-
-
MIN.
-0.5
+2.0
TYP.
-
-
MAX.
+0.8
V
DD
+0.3
+10
+ 10
UNIT
V
V
Input Leakage Current
Output Leakage
Current
I
LI
I
LO
V
IN
= V
SSQ
to V
DDQ
V
I/O
= V
SSQ
to V
DDQ,
and data
I/O pins in high-Z state defined
in truth table
I
OL
= +8.0 mA
I
OH
= -4.0 mA
T
CYC
≥
min. , I/O = 0 mA
Unselected mode defined in
truth table, V
IN
, V
IO
= V
IH
(min.)
/V
IL
(max.) T
CYC
≥
min.
ZZ mode, T
CYC
≥
min.
-10
-10
-
-
μ
A
μ
A
Output Low Voltage
Output High Voltage
Operating Current
Standby Current
V
OL
V
OH
I
DD
I
SB
-
-
-
-
-
0.4
-
350
80
V
V
2.4
-
-
mA
mA
ZZ Mode Current
I
ZZ
-
-
5
mA
Note: Typical characteristics are measured at V
DD
= 3.3V, T
A
= 25
°
C.
CAPACITANCE
(V
DD
= 3.3V, T
A
= 25
°
C, f = 1 MHz)
PARAMETER
SYM.
CONDITIONS
MAX.
UNIT
Input Capacitance
C
IN
V
IN
= 0V
6
pF
Input/Output Capacitance
C
I/O
V
OUT
= 0V
8
pF
Note: These parameters are sampled but not 100% tested.
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