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參數資料
型號: W29C022
廠商: WINBOND ELECTRONICS CORP
英文描述: 256K x 8 CMOS FLASH MEMORY
中文描述: 256K × 8的CMOS閃存
文件頁數: 1/20頁
文件大小: 166K
代理商: W29C022
W29C022
256K
8 CMOS FLASH MEMORY
Publication Release Date: March 26, 2002
- 1 -
Revision A3
GENERAL DESCRIPTION
The W29C022 is a 2-megabit, 5-volt only CMOS flash memory organized as 256K
×
8 bits. The device
can be written (erased and programmed) in-system with a standard 5V power supply. A 12-volt V
PP
is
not required. The unique cell architecture of the W29C022 results in fast write (erase/ program)
operations with extremely low current consumption compared to other comparable 5-volt flash memory
products. The device can also be written (erased and programmed) by using standard EPROM
programmers.
FEATURES
Single 5-volt write (erase and program)
operations
Fast page-write operations
128 bytes per page
Page write (erase/program) cycle: 10 mS
(max.)
Effective byte-write (erase/program) cycle
time: 39
μ
S
Optional software-protected data write
Fast chip-erase operation: 50 mS
Two 8 KB boot blocks with lockout
Typical page write (erase/program) cycles: 1K
Ten-year data retention
Software and hardware data protection
Low power consumption
Active current: 25 mA (typ.)
Standby current: 20
μ
A (typ.)
Automatic write (erase/program) timing with
internal V
PP
generation
End of write (erase/program) detection
Toggle bit
Data polling
Latched address and data
All inputs and outputs directly TTL compatible
JEDEC standard byte-wide pinouts
相關PDF資料
PDF描述
W29C040T-90 512K X 8 CMOS FLASH MEMORY
W29C040P-90 512K X 8 CMOS FLASH MEMORY
W29C040 512K X 8 CMOS FLASH MEMORY
W29C040P-12 512K X 8 CMOS FLASH MEMORY
W29C040P-12B 512K X 8 CMOS FLASH MEMORY
相關代理商/技術參數
參數描述
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