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參數資料
| 型號： | W29EE011 |
| 廠商： | WINBOND ELECTRONICS CORP |
| 英文描述： | 128K X 8 CMOS FLASH MEMORY |
| 中文描述： | 128K的× 8的CMOS閃存 |
| 文件頁數： | 1/20頁 |
| 文件大小： | 183K |
| 代理商： | W29EE011 |
W29EE011
128K
×
8 CMOS FLASH MEMORY
Publication Release Date: July 1999
- 1 -
Revision A12
GENERAL DESCRIPTION
The W29EE011 is a 1-megabit, 5-volt only CMOS flash memory organized as 128K
×
8 bits. The
device can be programmed and erased in-system with a standard 5V power supply. A 12-volt V
PP
is
not required. The unique cell architecture of the W29EE011 results in fast program/erase operations
with extremely low current consumption (compared to other comparable 5-volt flash memory
products). The device can also be programmed and erased using standard EPROM programmers.
FEATURES
Single 5-volt program and erase operations
Fast page-write operations
128 bytes per page
Page program cycle: 10 mS (max.)
Effective byte-program cycle time: 39
μ
S
Optional software-protected data write
Fast chip-erase operation: 50 mS
Read access time: 90/150 nS
Page program/erase cycles: 1K/10K
Ten-year data retention
Software and hardware data protection
Low power consumption
Active current: 25 mA (typ.)
Standby current: 20
μ
A (typ.)
Automatic program timing with internal V
PP
generation
End of program detection
Toggle bit
Data polling
Latched address and data
TTL compatible I/O
JEDEC standard byte-wide pinouts
Available packages: 32-pin 600 mil DIP,
TSOP, and PLCC
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| W29EE011-15 | 128K X 8 CMOS FLASH MEMORY |
| W29EE01115B | 128K X 8 CMOS FLASH MEMORY |
| W29EE01190B | 128K X 8 CMOS FLASH MEMORY |
| W29EE011P-90 | 128K X 8 CMOS FLASH MEMORY |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| W29EE011-12 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| W29EE011-15 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:128K X 8 CMOS FLASH MEMORY |
| W29EE01115B | 制造商:WINBOND 制造商全稱:Winbond 功能描述:128K X 8 CMOS FLASH MEMORY |
| W29EE011-15B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM|FLASH|128KX8|CMOS|DIP|32PIN|PLASTIC |
| W29EE011-15N | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM|FLASH|128KX8|CMOS|DIP|32PIN|PLASTIC |
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