- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄363880 > W29EE012 (WINBOND ELECTRONICS CORP) 128K X 8 CMOS FLASH MEMORY PDF資料下載
參數(shù)資料
| 型號(hào)： | W29EE012 |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | PROM |
| 英文描述： | 128K X 8 CMOS FLASH MEMORY |
| 中文描述： | 128K X 8 FLASH 5V PROM, 150 ns, UUC |
| 封裝： | DIE |
| 文件頁(yè)數(shù)： | 1/19頁(yè) |
| 文件大小： | 242K |
| 代理商： | W29EE012 |
當(dāng)前第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)
W29EE012
128K
′
8 CMOS FLASH MEMORY
Publication Release Date: March 26, 2002
- 1 -
Revision A3
GENERAL DESCRIPTION
The W29EE012 is a 1-megabit, 5-volt only CMOS flash memory organized as 128K
×
8 bits. The
device can be programmed and erased in-system with a standard 5V power supply. A 12-volt V
PP
is
not required. The unique cell architecture of the W29EE012 results in fast program/erase operations
with extremely low current consumption (compared to other comparable 5-volt flash memory products).
The device can also be programmed and erased using standard EPROM programmers.
FEATURES
Single 5-volt program and erase operations
Fast page-write operations
128 bytes per page
Page program cycle: 10 mS (max.)
Effective byte-program cycle time: 39
μ
S
Optional software-protected data write
Fast chip-erase operation: 50 mS
Page program/erase cycles: 1,000
Ten-year data retention
Software and hardware data protection
Low power consumption
Active current: 25 mA (typ.)
Standby current: 20
μ
A (typ.)
Automatic program timing with internal V
PP
generation
End of program detection
Toggle bit
Data polling
Latched address and data
TTL compatible I/O
JEDEC standard byte-wide pinouts
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| W29EE512Q-70 | 64K X 8 CMOS FLASH MEMORY |
| W29EE512Q-70B | 64K X 8 CMOS FLASH MEMORY |
| W29EE512Q-90 | 64K X 8 CMOS FLASH MEMORY |
| W29EE512Q-90B | 64K X 8 CMOS FLASH MEMORY |
| W29EE512P-12 | Multiple Conductor Wire; Number of Conductors:4; Conductor Size AWG:20; No. Strands x Strand Size:7 x 28; Approval Categories:UL NEC/CUL,CEC; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes; Voltage Nom.:300V RoHS Compliant: Yes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W29EE512 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:64K X 8 CMOS FLASH MEMORY |
| W29EE512-12 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| W29EE512-70 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| W29EE512-90 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| W29EE512P-12 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:64K X 8 CMOS FLASH MEMORY |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。