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參數資料
| 型號： | W29EE512S-12 |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | PROM |
| 英文描述： | 64K X 8 FLASH 5V PROM, 120 ns, PDSO32 |
| 封裝： | 0.450 INCH, SOP-32 |
| 文件頁數： | 1/21頁 |
| 文件大小： | 152K |
| 代理商： | W29EE512S-12 |
Preliminary W29EE512
64K
× 8 CMOS FLASH MEMORY
Publication Release Date: April 1997
- 1 -
Revision A4
GENERAL DESCRIPTION
The W29EE512 is a 512K bit, 5-volt only CMOS flash memory organized as 64K
× 8 bits. The device
can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not
required. The unique cell architecture of the W29EE512 results in fast program/erase operations with
extremely low current consumption (compared to other comparable 5-volt flash memory products).
The device can also be programmed and erased using standard EPROM programmers.
FEATURES
Single 5-volt program and erase operations
Fast page-write operations
128 bytes per page
Page program cycle: 10 mS (max.)
Effective byte-program cycle time: 39 S
Optional software-protected data write
Fast chip-erase operation: 50 mS
Read access time: 70/90/120 nS
Typical page program/erase cycles: 1K/10K
Ten-year data retention
Software and hardware data protection
Low power consumption
Active current: 25 mA (typ.)
Standby current: 20 A (typ.)
Automatic program timing with internal VPP
generation
End of program detection
Toggle bit
Data polling
Latched address and data
TTL compatible I/O
JEDEC standard byte-wide pinouts
Available packages: 32-pin 600 mil DIP, 450
mil SOP, PLCC and TSOP
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| WS512K8-85CMEA | 512K X 8 MULTI DEVICE SRAM MODULE, 85 ns, CDMA32 |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| W29EE512S-70 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| W29EE512S-90 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| W29EE512T-12 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:64K X 8 CMOS FLASH MEMORY |
| W29EE512T-12B | 制造商:WINBOND 制造商全稱:Winbond 功能描述:64K X 8 CMOS FLASH MEMORY |
| W29EE512T-70 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:64K X 8 CMOS FLASH MEMORY |
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