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參數資料
| 型號： | W29N102C |
| 廠商： | WINBOND ELECTRONICS CORP |
| 英文描述： | 64K×16bit CMOS 3.3V Flash Memory(64K×16位以3.3V電源供電的CMOS閃速存儲器) |
| 中文描述： | 64K的× 16位的CMOS 3.3V的快閃記憶體（64K的× 16位以3.3V的電源供電的閃速存儲器的CMOS） |
| 文件頁數： | 1/21頁 |
| 文件大小： | 253K |
| 代理商： | W29N102C |
Preliminary W29N102C
64K
×
16 CMOS 3.3V FLASH MEMORY
Publication Release Date: February 1999
- 1 -
Revision A1
GENERAL DESCRIPTION
The W29N102C is a 1-megabit, 3.3-volt only CMOS flash memory organized as 64K
×
16 bits. The
device can be programmed and erased in-system with a standard 3.3V power supply. A 12-volt V
PP
is
not required. The unique cell architecture of the W29N102C results in fast program/erase operations
with extremely low current consumption (compared to other comparable 3.3-volt flash memory
products). The device can also be programmed and erased using standard EPROM programmers.
FEATURES
Single 3.3-volt operations:
3.3-volt Read
3.3-volt Erase
3.3-volt Program
Fast Program operation:
Word-by-Word programming: 50
μ
S (max.)
Fast Erase operation: 100 mS (typ.)
Fast Read access time: 55/70/90 nS
Endurance: 1K/10K cycles (typ.)
Twenty-year data retention
Hardware data protection
8K word Boot Block with Lockout protection
Low power consumption
Active current: 15 mA (typ.)
Standby current: 10
μ
A (typ.)
Automatic program and erase timing with
internal V
PP
generation
End of program or erase detection
Toggle bit
Data polling
Latched address and data
TTL compatible I/O
JEDEC standard word-wide pinouts
Available packages: 40-pin TSOP and 44-pin
PLCC
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