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參數資料
| 型號： | W49L201T-70 |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | PROM |
| 英文描述： | 256K X 8 CMOS FLASH MEMORY |
| 中文描述： | 128K X 16 FLASH 3.3V PROM, 70 ns, PDSO48 |
| 封裝： | 12 X 20 MM, TSOP-48 |
| 文件頁數： | 1/23頁 |
| 文件大小： | 190K |
| 代理商： | W49L201T-70 |
Preliminary W49L201
128K
×
16 CMOS FLASH MEMORY
Publication Release Date: May 2000
- 1 -
Revision A1
GENERAL DESCRIPTION
The W49L201 is a 2-megabit, 3.3-volt only CMOS flash memory organized as 128K
×
16 bits. The
device can be programmed and erased in-system with a standard 3.3V power supply. A 12-volt V
PP
is
not required. The unique cell architecture of the W49L201 results in fast program/erase operations
with extremely low current consumption (compared to other comparable 3.3-volt flash memory
products). The device can also be programmed and erased using standard EPROM programmers.
FEATURES
Single 3.3-volt operations:
3.3-volt Read/Erase/Program
Fast Program operation:
Word-by-Word programming: 50
μ
S (max.)
Fast Erase operation: 100 mS (typ.)
Fast Read access time: 70/90 nS
Endurance: 10K cycles (typ.)
Ten-year data retention
Hardware data protection
Sector configuration
One 8K words Boot Block with lockout
protection
Two 8K words Parameter Blocks
One 104K words (208K bytes) Main Memory
Array Blocks
Low power consumption
Active current: 15 mA (typ.)
Standby current: 10
μ
A (typ.)
Automatic program and erase timing with
internal V
PP
generation
End of program or erase detection
Toggle bit
Data polling
Latched address and data
TTL compatible I/O
JEDEC standard word-wide pinouts
Available packages: 44-pin SOP, 48-pin TSOP
相關PDF資料 |
PDF描述 |
|---|---|
| W49L201 | 128Kx16bit CMOS Flash Memory(128K×16位CMOS 閃速存儲器) |
| W49S201 | 128K×16bit CMOS Flash Memory With Synchronous Burst Read(具有同步脈沖讀模式的128K×16位CMOS閃速存儲器) |
| W49V002P | Zener Diode; Application: Low noise; Pd (mW): 250; Vz (V): 3.4 to 3.8; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD |
| W49V002T | Zener Diode; Application: Low noise; Pd (mW): 250; Vz (V): 3.7 to 4.1; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD |
| W49V002 | 256K X 8 CMOS FLASH MEMORY WITH FWH INTERFACE |
相關代理商/技術參數 |
參數描述 |
|---|---|
| W49L201T-90 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:256K X 8 CMOS FLASH MEMORY |
| W49L401 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:FLASH |
| W49L401S-70B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM |
| W49L401T-70B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM |
| W49L401TS70B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM |
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