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參數資料
| 型號： | W963L6ABN80I |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | SRAM |
| 英文描述： | GT 3C 3#4 PIN PLUG |
| 中文描述： | 512K X 16 PSEUDO STATIC RAM, 75 ns, PBGA48 |
| 封裝： | 8 X 10 MM, 0.75 MM PITCH, TFBGA-48 |
| 文件頁數： | 1/30頁 |
| 文件大小： | 1028K |
| 代理商： | W963L6ABN80I |
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W963L6ABN
512K WORD
×
16 BIT LOW POWER PSEUDO SRAM
Publication Release Date: March 11, 2003
- 1 -
Revision A1
Table of Contents-
1. GENERAL DESCRIPTION.................................................................................................................. 3
2. FEATURES ......................................................................................................................................... 3
3. PRODUCT OPTIONS ......................................................................................................................... 3
4. BALL CONFIGURATION .................................................................................................................... 4
5. BALL DESCRIPTION.......................................................................................................................... 4
6. BLOCK DIAGRAM .............................................................................................................................. 5
7. FUNCTION TRUTH TABLE................................................................................................................ 6
8. ELECTRICAL CHARACTERISTICS................................................................................................... 7
Absolute Maximum Ratings .............................................................................................................. 7
Recommended Operating Conditions............................................................................................... 7
Capacitance ...................................................................................................................................... 8
DC Characteristics ............................................................................................................................ 8
AC Characteristics ............................................................................................................................ 9
Read Operation ..........................................................................................................................................9
Write Operation.........................................................................................................................................11
P
ower
D
own
and P
ower
D
own
P
rogram
P
arameters ............................................................................13
Other Timing Parameters .........................................................................................................................13
AC Test Conditions...................................................................................................................................13
9. TIMING WAVEFORMS ..................................................................................................................... 14
Read Timing #1 (
OE
Control Access)........................................................................................... 14
Read Timing #2 (
CE1
Control Access) ......................................................................................... 15
Read Timing #3 (Address Access after
OE
Control Access)....................................................... 16
Read Timing #4 (Address Access after
CE1
Control Access)..................................................... 17
Write Timing #1 (
CE1
Control) ...................................................................................................... 18
Write Timing #2-1 (
WE
Control, Single Write Operation)............................................................. 19
Write Timing #2 (
WE
Control, Continuous Write Operation)......................................................... 20
Read/Write Timing #1-1 (
CE1
Control).......................................................................................... 21
Read/Write Timing #1-2 (
CE1
Control).......................................................................................... 22
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PDF描述 |
|---|---|
| W971632AF | 256K x 32 bit x 2 Banks SGRAM(256K x 32位 x 2組同步圖形RAM) |
| W981208AH | 4M x 8 bit x 4 Banks SDRAM |
| W981208BH | 4M x 4 BANKS x 8 BIT SDRAM |
| W981208AH-75 | x8 SDRAM |
| W981208AH-8H | x8 SDRAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| W964B6BBN | 制造商:WINBOND 制造商全稱:Winbond 功能描述:1M WORD X 16BIT LOW POWER PSEUDO SRAM |
| W964B6BBN70 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:1M WORD X 16BIT LOW POWER PSEUDO SRAM |
| W964B6BBN70E | 制造商:WINBOND 制造商全稱:Winbond 功能描述:1M WORD X 16BIT LOW POWER PSEUDO SRAM |
| W964B6BBN70O | 制造商:WINBOND 制造商全稱:Winbond 功能描述:1M WORD X 16BIT LOW POWER PSEUDO SRAM |
| W964B6BBN80 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:1M WORD X 16BIT LOW POWER PSEUDO SRAM |
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