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參數(shù)資料
型號(hào)： W986408CH-8H
廠商： WINBOND ELECTRONICS CORP
元件分類： DRAM
英文描述： x8 SDRAM
中文描述： 8M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54
封裝： 0.400 INCH, 0.80 MM PITCH, TSOP2-54
文件頁(yè)數(shù)： 1/44頁(yè)
文件大小： 2208K
代理商： W986408CH-8H
W986408CH
2M x 8 bit x 4 Banks SDRAM
Revision 1.0 Publication Release Date: March, 1999
- 1 -
Features
3.3V
±
0.3V power supply
Up to 133MHz clock frequency
2,097,152 words x 4 banks x 8 bits organization
Auto Refresh and Self Refresh
CAS latency: 2 and 3
Burst Length: 1, 2, 4, 8 , and full page
Burst read, Single Writes Mode
Byte data controlled by DQM
Power-Down Mode
Auto-Precharge and controlled precharge
4k refresh cycles / 64ms
Interface: LVTTL
Package: TSOP II 54 pin, 400 mil - 0.80
General Description
W986408CH is a high speed synchronous dynamic random access memory (SDRAM) , organized as 2M words x 4 banks x
8 bits. Using pipelined architecture and 0.20um process technology, W986408CH delivers a data bandwidth of up to 133M ( -
75) bytes per second. To fully comply to the personal computer industrial standard, W986408CH is sorted into two speed
grades: -75 and -8H. The -75 is compliant to the PC133 specitication, The -8H is compliant to the PC100/CL2 specification
Accesses to the SDRAM are burst oriented. Consecutive memory location in one page can be accessed at a burst length of
1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVE command. Column addresses are automatically generated
by the SDRAM internal counter in burst operation. Random column read is also possible by providing its address at each clock
cycle. The multiple bank nature enables interleaving among internal banks to hide the precharging time.
By having a programmable Mode Register, the system can change burst length, latency cycle, interleave or sequential burst
to maximize its performance. W986408CH is ideal for main memory in high performance applications.
Key Parameters
Symbol
t
CK
Clock Cycle Time
t
AC
Access Time from CLK
t
RP
Precharge to Active Command
t
RCD
Active to Read/Write Command
I
CC1
Operation Current ( Single bank )
I
CC4
Burst Operation Current
I
CC6
Self-Refresh Current
Description
min/max
min
max
min
min
max
max
max
-75 (PC133)
7.5ns
5.4ns
20ns
20ns
65mA
115mA
1mA
-8H (PC100)
8ns
6ns
20ns
20ns
60mA
110mA
1mA
相關(guān)PDF資料
PDF描述
W986416AH 1M words x 16 bit x 4 Banks SDRAM(1M字 x 16 位 x 4 組同步動(dòng)態(tài)RAM)
W986416BH 1M words x 16 bit x 4 Banks SDRAM(1M字 x 16 位 x 4 組同步動(dòng)態(tài)RAM)
W986416DH 1M X 4 BANKS X 16 BITS SDRAM
W986416CH 1M x 16 BIT x 4 BANKS SDRAM
W986416CH-6 x16 SDRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
W986416CH 制造商:WINBOND 制造商全稱:Winbond 功能描述:1M x 16 BIT x 4 BANKS SDRAM
W986416CH-6 制造商:WINBOND 制造商全稱:Winbond 功能描述:x16 SDRAM
W986416CH-7 制造商:Winbond Electronics Corp 功能描述:SDRAM, 4M x 16, 54 Pin, Plastic, TSOP
W986416CH-75 制造商:WINBOND 制造商全稱:Winbond 功能描述:x16 SDRAM
W986416CH-8H 制造商:WINBOND 制造商全稱:Winbond 功能描述:x16 SDRAM
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