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參數(shù)資料
型號: WMBT5551LT1
廠商: 永盛國際集團
英文描述: NPN Silicon Transistor
中文描述: NPN硅晶體管
文件頁數(shù): 1/2頁
文件大小: 36K
代理商: WMBT5551LT1
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
IC
Vdc
Collector–Base Voltage
Vdc
Emitter–Base Voltage
6.0
Vdc
Collector Current — Continuous
600
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR–5 Board(1)
TA = 25
°
C
Derate above 25
°
C
PD
225
1.8
mW
mW/
°
C
Thermal Resistance, Junction to Ambient
RJA
PD
556
°
C/W
Total Device Dissipation
Alumina Substrate,(2) TA = 25
°
C
Derate above 25
°
C
mW
mW/
°
C
Thermal Resistance, Junction to Ambient
RJA
TJ, Tstg
°
C/W
Junction and Storage Temperature
–55 to +150
°
C
DEVICE MARKING
MMBT5550LT1 = M1F; MMBT5551LT1 = G1
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(3)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
160
Vdc
Collector–Base Breakdown Voltage
(IC = 100 Adc, IE = 0)
V(BR)CBO
180
Vdc
Emitter–Base Breakdown Voltage
(IE = 10 Adc, IC = 0)
V(BR)EBO
6.0
Vdc
Collector Cutoff Current
(VCB = 120 Vdc, IE = 0)
(VCB = 120 Vdc, IE = 0, TA = 100
°
C)
ICBO
50
50
nAdc
μ
Adc
Emitter Cutoff Current
(VEB = .0 Vdc, IC = 0)
5
IEBO
50
nAdc
1
2
3
SOT–23 (TO–236AB)
COLLECTOR
3
1
BASE
2
EMITTER
Wing Shing Computer Components Co., (H.K.)Ltd.
Homepage:
http://www.wingshing.com
Tel:(852) 2341 9276 Fax:(852) 27978153
E-mail: wsccltd@hkstar.com
WMBT5551LT1
160
180
Transistor
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相關代理商/技術參數(shù)
參數(shù)描述
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