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參數資料
| 型號： | X2N4339 |
| 廠商： | CALOGIC LLC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-Channel JFET Low Noise Amplifier |
| 中文描述： | N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 文件頁數： | 1/1頁 |
| 文件大小： | 19K |
| 代理商： | X2N4339 |
N-Channel JFET
LowNoise Ampifier
2N4338 – 2N4341
FEATURES
Exceptionally High Figure of Merit
Radiation Immunity
Extremely Low Noise and Capacitance
High Input Impedance
APPLICATIONS
Low-level Choppers
Data Switches
Multiplexers and Low Noise Amplifiers
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25
o
C unless otherwise noted)
Gate-Source or Gate-Drain Voltage . . . . . . . . . . . . . . . . -50V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Storage Temperature Range . . . . . . . . . . . . . -65
o
C to +200
o
C
Operating Temperature Range . . . . . . . . . . . -55
o
C to +175
o
C
Lead Temperature (Soldering, 10sec). . . . . . . . . . . . . +300
o
C
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Derate above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . 2.0mW/
o
C
NOTE:
Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
ORDERING INFORMATION
Part
2N4338-41
X2N4338-41
Package
Hermetic TO-18
Sorted Chips in Carriers
Temperature Range
-55
o
C to +175
o
C
-55
o
C to +175
o
C
C ORPORATION
PIN CONFIGURATION
S
TO-18
G,C
D
ELECTRICAL CHARACTERISTICS
(T
A
= 25
o
C unless otherwise specified)
SYMBOL
PARAMETER
2N4338
MIN MAX MIN MAX MIN MAX MIN MAX
-0.1
-0.1
-0.1
-0.1
-50
-50
-0.3
-1
-0.6
-1.8
0.05
(-5)
(-5)
0.2
0.6
0.5
1.5
2N4339
2N4340
2N4341
UNITS
TEST CONDITIONS
I
GSS
Gate Reverse Current
-0.1
-0.1
-0.1
-0.1
nA
μ
A
V
GS
= -30V, V
DS
= 0
T
A
= 150
o
C
BV
GSS
V
GS(off)
Gate-Source Breakdown Voltage
Gate-Source Cutoff Voltage
-50
-1
-50
-2
V
I
G
= -1
μ
A, V
DS
= 0
V
DS
= 15V, I
D
= 0.1
μ
A
V
DS
= 15V,
V
GS
= ( )
V
DS
= 15V, V
GS
= 0
-3
-6
I
D(off)
Drain Cutoff Current
0.05
0.05
(-5)
3.6
0.07
(-10)
9
nA
(V)
mA
I
DSS
Saturation Drain Current (Note 2)
Common-Source Forward
Transconductance (Note 2)
Common-Source Output Conductance
Drain-Source ON Resistance
Common-Source Input Capacitance
Common-Source Reverse Transfer
Capacitance
1.2
3
g
fs
600 1800 800 2400 1300 3000 2000 4000
μ
S
V
DS
= 15V,
V
GS
= 0
f = 1kHz
g
os
r
DS(on)
C
iss
5
15
1700
7
30
1500
7
60
800
7
2500
7
ohm
V
DS
= 0, I
DS
= 0
pF
V
DS
= 15V,
V
GS
= 0 (Note 1)
f = 1MHz
C
rss
3
3
3
3
NF
Noise Figure (Note 1)
1
1
1
1
dB
V
DS
= 15V,
V
GS
= 0
R
= 1meg,
BW = 200Hz
f = 1kHz
NOTES: 1.
For design reference only, not 100% tested.
2.
Pulse test duration 2ms (non-JEDEC Condition).
5010
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相關代理商/技術參數 |
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| X2N4340 | 制造商:CALOGIC 制造商全稱:CALOGIC 功能描述:N-Channel JFET Low Noise Amplifier |
| X2N4341 | 制造商:CALOGIC 制造商全稱:CALOGIC 功能描述:N-Channel JFET Low Noise Amplifier |
| X2N4351 | 制造商:CALOGIC 制造商全稱:CALOGIC 功能描述:N-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch |
| X2N4352 | 制造商:CALOGIC 制造商全稱:CALOGIC 功能描述:P-Channel Enhancement Mode MOSFET Amplifier/Switch |
| X2N4391 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 40V V(BR)DSS | 150MA I(DSS) | CHIP |
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