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參數資料
| 型號： | XL1000 |
| 廠商： | MIMIX BROADBAND INC |
| 元件分類： | 衰減器 |
| 英文描述： | 20.0-40.0 GHz GaAs MMIC Low Noise Amplifier |
| 中文描述： | 20000 MHz - 40000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | DIE-4 |
| 文件頁數： | 1/7頁 |
| 文件大?。?/td> | 927K |
| 代理商： | XL1000 |
20.0-40.0 GHz GaAs MMIC
Low Noise Amplifier
Page 1 of 7
Features
Self Bias Architecture
Small Size
3.0 or 5.0 V Operation
20.0 dB Small Signal Gain
2.0 dB Noise Figure
+9.0 dBm P1dB Compression Point
100% On-Wafer RF, DC and Noise Figure Testing
100% Visual Inspection to MIL-STD-883
Method 2010
General Description
Mimix Broadband
’
s three stage 20.0-40.0 GHz GaAs
MMIC low noise amplifier has a small signal gain of 20.0
dB with a noise figure of 2.0 dB across the band. This
MMIC uses Mimix Broadband
’
s 0.15
μ
m GaAs PHEMT
device model technology, and is based upon electron
beam lithography to ensure high repeatability and
uniformity. The chip has surface passivation to protect
and provide a rugged part with backside via holes and
gold metallization to allow either a conductive epoxy
or eutectic solder die attach process. This device is well
suited for Millimeter-wave Point-to-Point Radio, LMDS,
SATCOM and VSAT applications.
Parameter
Units
GHz
dB
dB
dB
dB
dB
dB
dBm
dBm
VDC
mA
Min.
20.0
6.0
4.0
12.0
-
30.0
-
-
-
-
-
Typ.
-
12.0
10.0
20.0
+/-4.0
45.0
2.0
+9.0
+16.0
+3.0
35
Max.
40.0
-
-
-
-
-
-
-
-
+5.0
50
Supply Voltage (Vd)
Supply Current (Id)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+7.0 VDC
70 mA
+12 dBm
-65 to +165
O
C
-55 to MTTF Table
MTTF Table
Chip Device Layout
(1) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
1
1
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
Electrical Characteristics (Ambient Temperature T = 25
o
C)
Absolute Maximum Ratings
Frequency Range (f)
Input Return Loss (S11) @ 22.0-36.0 GHz
Output Return Loss (S22) @ 22.0-36.0 GHz
Small Signal Gain (S21)
Gain Flatness (
S21)
Reverse Isolation (S12)
Noise Figure (NF) @ 24.0-40.0 GHz
Output Power for 1 dB Compression (P1dB)
Output Third Order Intercept Point (OIP3)
Drain Bias Voltage (Vd)
Supply Current (Id) (Vd=3.0V or 5.0V)
L1000
April 2005 - Rev 01-Apr-05
(2) Unless otherwise indicated min/max over 20.0-40.0 GHz and biased at Vd=5V, Id=50mA.
2
2
相關PDF資料 |
PDF描述 |
|---|---|
| XL1001 | 17.0-35.0 GHz GaAs MMIC Low Noise Amplifier |
| XL1002 | 20.0-36.0 GHz GaAs MMIC Low Noise Amplifier |
| XL1003 | 24.0-40.0 GHz GaAs MMIC Low Noise Amplifier |
| XL1004 | 35.0-45.0 GHz GaAs MMIC Low Noise Amplifier |
| XL1005 | 5.0-20.0 GHz GaAs MMIC Low Noise Amplifier |
相關代理商/技術參數 |
參數描述 |
|---|---|
| XL1000-BD | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:20.0-40.0 GHz GaAs MMIC Low Noise Amplifier |
| XL1000-BD_10 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:20.0-40.0 GHz GaAs MMIC |
| XL1000-BD-000V | 制造商:M/A-COM Technology Solutions 功能描述:MMW LNA |
| XL1000-BD-EV1 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:20.0-40.0 GHz GaAs MMIC Low Noise Amplifier |
| XL1001 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:17.0-35.0 GHz GaAs MMIC Low Noise Amplifier |
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