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參數(shù)資料
型號: XL1004
廠商: MIMIX BROADBAND INC
元件分類: 衰減器
英文描述: 35.0-45.0 GHz GaAs MMIC Low Noise Amplifier
中文描述: 35000 MHz - 45000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
封裝: DIE-3
文件頁數(shù): 1/6頁
文件大?。?/td> 168K
代理商: XL1004
35.0-45.0 GHz GaAs MMIC
Low Noise Amplifier
Page 1 of 6
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
May 2006 - Rev 10-May-06
L1004
Mimix Broadband’s three stage balanced 35.0-45.0
GHz GaAs MMIC low noise amplifier has a small signal
gain of 17.0 dB with a noise figure of 1.8 dB across the
band. This MMIC uses Mimix Broadband’s 0.15 μm
GaAs PHEMT device model technology, and is based
upon electron beam lithography to ensure high
repeatability and uniformity. The chip has surface
passivation to protect and provide a rugged part with
backside via holes and gold metallization to allow
either a conductive epoxy or eutectic solder die
attach process. This device is well suited for
Millimeter-wave Point-to-Point Radio, LMDS, SATCOM
and VSAT applications.
Absolute Maximum Ratings
Features
Balanced Design
Excellent Input/Output Match
Self-biased Architecture
17.0 dB Small Signal Gain
1.8 dB Noise Figure
100% On-Wafer RF, DC and Noise Figure Testing
100% Visual Inspection to MIL-STD-883
Method 2010
General Description
Supply Voltage (Vd)
Supply Current (Id)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+5.5 VDC
130 mA
-5.0/-1.0 dBm
-65 to +165
O
C
-55 to MTTF Table
MTTF Table
(1) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
1
Chip Device Layout
Frequency Range (f)
Input Return Loss (S11)
Output Return Loss (S22)
Small Signal Gain (S21)
Gain Flatness ( S21)
Reverse Isolation (S12)
Noise Figure (NF)
Output Power for 1 dB Compression (P1dB)
Output Third Order Intercept Point (OIP3)
Drain Bias Voltage (Vd)
Supply Current (Id)
Electrical Characteristics (Ambient Temperature T = 25
o
C)
Parameter
Units
GHz
dB
dB
dB
dB
dB
dB
dBm
dBm
VDC
mA
Min.
35.0
8.0
15.0
15.0
-
-
-
-
-
-
-
Typ.
-
16.0
18.0
17.0
+/-2.0
-
1.8
+6.0
-
+4.0
85
Max.
40.0
-
-
-
-
-
3.0
-
-
-
-
1
(2) See plots for additional information.
Min.
40.0
15.0
15.0
10.0
-
-
-
-
-
-
-
Typ.
-
17.0
18.0
14.0
+/-2.0
-
2.0
+6.0
-
+4.0
85
Max.
45.0
-
-
-
-
-
3.0
-
-
-
-
2
2
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