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參數資料
| 型號： | XM1006-BD |
| 廠商： | Mimix Broadband, Inc. |
| 英文描述： | 13.0-25.0 GHz GaAs MMIC Image Reject Mixer |
| 中文描述： | 13.0-25.0 GHz的砷化鎵微波單片集成電路圖像抑制混頻器 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 325K |
| 代理商： | XM1006-BD |
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
General Description
Mimix Broadband
’
s 13.0-25.0 GHz GaAs MMIC
fundamental image reject Kowari mixer can be used as
an up- or down-converter. The device has a conversion
loss of 7.0 dB with 20.0 dB image rejection across the
band. I and Q mixer outputs are provided and an external
90 degree hybrid is required to select the desired
sideband. This MMIC uses Mimix Broadband
’
s 2
μ
m GaAs
HBT device model technology, and is based upon
electron beam lithography to ensure high repeatability
and uniformity. The chip has surface passivation to
protect and provide a rugged part with backside via
holes and gold metallization to allow either a conductive
epoxy or eutectic solder die attach process. This device is
well suited for Millimeter-wave Point-to-Point Radio,
LMDS, SATCOM and VSAT applications.
+20 dBm
+20 dBm
-65 to +165
O
C
-55 to +125
O
C
Absolute Maximum Ratings
Fundamental Image Reject Mixer
GaAs HBT Technology
7.0 dB Conversion Loss
20.0 dB Image Rejection
100% On-Wafer RF Testing
100% Visual Inspection to MIL-STD-883
Method 2010
Features
Input Power (RF Pin)
Input Power (IF Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Chip Device Layout
Page 1 of 6
13.0-25.0 GHz GaAs MMIC
Image Reject Mixer
Electrical Characteristics (Ambient Temperature T = 25
o
C)
Parameter
Frequency Range (RF) Upper Side Band
Frequency Range (RF) Lower Side Band
Frequency Range (LO)
Frequency Range (IF)
RF Return Loss (S11)
IF1/IF2 Return Loss (S22)
LO Return Loss (S33)
Conversion Loss (S21)
LO Input Drive (P
LO
)
Image Rejection
Isolation LO/RF
Isolation LO/IF
Isolation RF/IF
Output Third Order Intercept (OIP3)
Units
GHz
GHz
GHz
GHz
dB
dB
dB
dB
dBm
dBc
dB
dB
dB
dBm
Min.
15.0
13.0
11.0
DC
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
10.0
10.0
TBD
7.0
+16.0
20.0
TBD
TBD
TBD
+12.0
Max.
25.0
25.0
29.0
4.0
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-
-
-
-
-
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February 2007 - Rev 26-Feb-07
M1006-BD
XM1006-BD
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相關代理商/技術參數 |
參數描述 |
|---|---|
| XM1006-BD-000V | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:13.0-25.0 GHz GaAs MMIC Image Reject Mixer |
| XM1006-BD-EV1 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:13.0-25.0 GHz GaAs MMIC Image Reject Mixer |
| XM1007K BK001 | 功能描述:多芯電纜 10AWG 7C UNSHLD 1000ft SPOOL BLACK RoHS:否 制造商:Alpha Wire 導體數量:3 線規 - 美國線規（AWG）:16 絞合:19 x 29 屏蔽:Shielded 長度:100 ft 電壓額定值:600 V 外殼材料:Polytetrafluoroethylene (PTFE) 絕緣材料:Polytetrafluoroethylene (PTFE) 類型:Communication and Control |
| XM1007KCY BK001 | 功能描述:多芯電纜 10AWG 7C SHIELD 1000ft SPOOL BLACK RoHS:否 制造商:Alpha Wire 導體數量:3 線規 - 美國線規（AWG）:16 絞合:19 x 29 屏蔽:Shielded 長度:100 ft 電壓額定值:600 V 外殼材料:Polytetrafluoroethylene (PTFE) 絕緣材料:Polytetrafluoroethylene (PTFE) 類型:Communication and Control |
| XM1007L BK001 | 功能描述:多芯電纜 10AWG 7C UNSHLD 1000ft SPOOL BLACK RoHS:否 制造商:Alpha Wire 導體數量:3 線規 - 美國線規（AWG）:16 絞合:19 x 29 屏蔽:Shielded 長度:100 ft 電壓額定值:600 V 外殼材料:Polytetrafluoroethylene (PTFE) 絕緣材料:Polytetrafluoroethylene (PTFE) 類型:Communication and Control |
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